Study of stress and adhesion strength in SU-8 resist layers on silicon substrate with different seed layers

2007 ◽  
Vol 6 (3) ◽  
pp. 033006 ◽  
Author(s):  
Muralidhar K. Ghantasala
Keyword(s):  
Adhesion Strength ◽  
Silicon Substrate ◽  
Seed Layers

THE METHOD FOR ADHESION STRENGTH DETERMINING OF SILVER COATING TO THE SILICON SUBSTRATE BY GLUE APPLYING

2015 ◽  
Vol 0 (4) ◽  
pp. 12-12 ◽  
Author(s):  
V.I. Lukin ◽  
◽  
V.S. Rulnikov ◽  
A.N. Afanasiev-Khodikin ◽  
K.E. Kucevich ◽  
...  
Keyword(s):  
Adhesion Strength ◽  
Silicon Substrate ◽  
Silver Coating

Adhesion strength of plasma-assisted CVD B(C,N) film to silicon substrate

1999 ◽  
Vol 13 (5) ◽  
pp. 615-627 ◽  
Author(s):  
S. Nakamura ◽  
N. Saito ◽  
S. Yoshioka ◽  
I. Nakaaki ◽  
Y. Suzaki
Keyword(s):  
Adhesion Strength ◽  
Silicon Substrate

Enhanced Adhesion Strength between Silicon Substrate and Metal Film by Surface Fluorination

2017 ◽  
Vol 46 (11) ◽  
pp. 1643-1645
Author(s):  
Fumihiro Nishimura ◽  
Jae-Ho Kim ◽  
Susumu Yonezawa
Keyword(s):  
Adhesion Strength ◽  
Silicon Substrate ◽  
Metal Film ◽  
Surface Fluorination

The Correlation of Adhesion Strength with Barrier Structure in Cu Metallization

2003 ◽  
Vol 766 ◽  
Author(s):  
A. Sekiguchi ◽  
J. Koike ◽  
K. Ueoka ◽  
J. Ye ◽  
H. Okamura ◽  
...  
Keyword(s):  
Thin Films ◽  
Adhesion Strength ◽  
Nitrogen Concentration ◽  
Scratch Test ◽  
Barrier Structure ◽  
Barrier Layers ◽  
Cu Metallization ◽  
Microstructure Observation ◽  
Sputter Deposited ◽  
Sulfur Containing

AbstractAdhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Improvement of Adhesion Strength of Fluoropolymer Thin Films by Vapor Deposition Polymerization

2013 ◽  
Vol E96.C (3) ◽  
pp. 374-377 ◽  
Author(s):  
Kazuo SENDA ◽  
Tsuyoshi MATSUDA ◽  
Kuniaki TANAKA ◽  
Hiroaki USUI
Keyword(s):  
Thin Films ◽  
Adhesion Strength ◽  
Vapor Deposition

Transport Properties Of Metallic Nanowires On Silicon Substrate

2014 ◽  
Vol 2 (1) ◽  
pp. 20-23
Author(s):  
Jaskiran Kaur ◽  
◽  
Surinder Singh ◽  
Keyword(s):  
Transport Properties ◽  
Silicon Substrate ◽  
Metallic Nanowires

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

Studies on a Novel Qualification Method of Silicon Nitride Layer

2016 ◽  
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate ◽  
Nitride Layer ◽  
Passivation Layer ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Si3n4 Layer ◽  
Silicon Nitride Layer ◽  
Passivation Layers ◽  
Pinhole Test

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

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