scholarly journals Zero-Bias Spin Separation

2010 ◽  
pp. 243-264 ◽  
Author(s):  
V Bel’kov ◽  
S Ganichev
Keyword(s):  
Zero Bias

scholarly journals Topological isoconductance signatures in Majorana nanowires

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
L. S. Ricco ◽  
J. E. Sanches ◽  
Y. Marques ◽  
M. de Souza ◽  
M. S. Figueira ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Transport Properties ◽  
Spin Polarization ◽  
Bound States ◽  
Spin Asymmetry ◽  
Experimental Protocol ◽  
Zero Bias ◽  
Topological Superconductor ◽  
Hybrid Device ◽  
Majorana Bound States

AbstractWe consider transport properties of a hybrid device composed by a quantum dot placed between normal and superconducting reservoirs, and coupled to a Majorana nanowire: a topological superconducting segment hosting Majorana bound states (MBSs) at the opposite ends. It is demonstrated that if highly nonlocal and nonoverlapping MBSs are formed in the system, the zero-bias Andreev conductance through the dot exhibits characteristic isoconductance profiles with the shape depending on the spin asymmetry of the coupling between the dot and the topological superconductor. Otherwise, for overlapping MBSs with less degree of nonlocality, the conductance is insensitive to the spin polarization and the isoconductance signatures disappear. This allows to propose an alternative experimental protocol for probing the nonlocality of the MBSs in Majorana nanowires.

Polymer Photodetectors for Printable, Flexible, and Fully Tissue Equivalent X‐Ray Detection with Zero‐Bias Operation and Ultrafast Temporal Responses

2021 ◽  
pp. 2001298
Author(s):  
Jessie A. Posar ◽  
Jeremy Davis ◽  
Saree Alnaghy ◽  
Dean Wilkinson ◽  
Sophie Cottam ◽  
...  
Keyword(s):  
Zero Bias ◽  
X Ray ◽  
Tissue Equivalent

scholarly journals MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1672
Author(s):  
Umahwathy Sundararaju ◽  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Pin Jern Ker ◽  
P. Susthitha Menon
Keyword(s):  
Flexible Electronics ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Optical Power ◽  
Active Regions ◽  
Green Technology ◽  
Plasmonic Effect ◽  
Zero Bias ◽  
Electrical Signals ◽  
Self Powered

A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device’s photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS2) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS2 and graphene/h-BN/MoS2 heterostructures with plasmonic effect is presented with potential leads to new research opportunities.

Binary information storage at zero bias in quantum‐well diodes

1994 ◽  
Vol 76 (9) ◽  
pp. 5552-5560 ◽  
Author(s):  
F. A. Buot ◽  
A. K. Rajagopal
Keyword(s):  
Quantum Well ◽  
Information Storage ◽  
Zero Bias ◽  
Binary Information

Monodispersed hierarchical ZnGa2O4 microflowers for self-powered solar-blind detection

2016 ◽  
Vol 4 (15) ◽  
pp. 3113-3118 ◽  
Author(s):  
Yue Teng ◽  
Le Xin Song ◽  
Wei Liu ◽  
Zhe Yuan Xu ◽  
Qing Shan Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Bias Voltage ◽  
Dark Current ◽  
Blind Detection ◽  
Current Ratio ◽  
Zero Bias ◽  
Single Crystalline ◽  
Short Response Time ◽  
Solar Blind ◽  
Self Powered

We successfully synthesized ZnGa2O4 microflowers self-assembled by hexagonal single-crystalline nanopetals. The ZnGa2O4 crystal exhibits improved solar-blind detection performance such as short response time, large light to dark current ratio and high photocurrent stability under zero bias voltage.

scholarly journals Anomalous Zero-Bias Conductance Peak in a Nb–InSb Nanowire–Nb Hybrid Device

Nano Letters ◽  
2012 ◽  
Vol 12 (12) ◽  
pp. 6414-6419 ◽  
Author(s):  
M. T. Deng ◽  
C. L. Yu ◽  
G. Y. Huang ◽  
M. Larsson ◽  
P. Caroff ◽  
...  
Keyword(s):  
Zero Bias ◽  
Hybrid Device ◽  
Conductance Peak ◽  
Zero Bias Conductance

Evidence For Non-Correlation Between The 0.15 eV And 0.44 eV Cu-Related Acceptor Levels In GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
K. Leosson ◽  
H. P. Gislason
Keyword(s):  
Reverse Bias ◽  
Deep Level ◽  
Current Transient ◽  
Zero Bias ◽  
Lithium Diffusion ◽  
Transient Spectroscopy ◽  
Plasma Hydrogenation

AbstractWe present investigations on the two dominating acceptor levels observed in Cu-diffused GaAs which have frequently been attributed to the two ionization levels of a double CuGa acceptor. We employed plasma hydrogenation and lithium diffusion followed by reverse-bias and zero-bias annealing to passivate and subsequently reactivate the Cu-related acceptor levels. Deep-level current-transient spectroscopy measurements reveal that the two levels are independently reactivated, strongly indicating that they arise from different defects.

scholarly journals Nonequilibrium Zero-Bias Anomaly in Disordered Metals

2008 ◽  
Vol 100 (8) ◽  
Author(s):  
D. B. Gutman ◽  
Yuval Gefen ◽  
A. D. Mirlin
Keyword(s):  
Zero Bias ◽  
Disordered Metals ◽  
Zero Bias Anomaly

scholarly journals Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Amir Muhammad Afzal ◽  
In-Gon Bae ◽  
Yushika Aggarwal ◽  
Jaewoo Park ◽  
Hye-Ryeon Jeong ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Bias Voltage ◽  
High Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Zero Bias ◽  
Decay Times ◽  
Order Of Magnitude ◽  
Self Powered

AbstractHybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

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