Regime where zero-bias is the low-power solution for digitally modulated laser diodes

1996 ◽  
Vol 8 (2) ◽  
pp. 185-187 ◽  
Author(s):  
L.P. Chen ◽  
K.Y. Lau
Keyword(s):  
Low Power ◽  
Laser Diodes ◽  
Zero Bias ◽  
Digitally Modulated

Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C

2016 ◽  
Vol 94 (7) ◽  
pp. 640-644 ◽  
Author(s):  
Santosh Chackrabarti ◽  
Dhrub Sharma ◽  
Shereena Joseph ◽  
Tho-alfiqar A. Zaker ◽  
A.K. Hafiz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Band Gap ◽  
Characteristic Temperature ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Spectral Shifts ◽  
Band Gap Narrowing

We report on the temperature-dependent spectral shifts in low power 670 nm AlGaInP multiple quantum well red laser diodes due to band gap narrowing at room temperatures (5–45 °C). The spectral shift mechanism is explored with a threshold current density of 11.41 kA/cm2 and a good characteristic temperature of 114 K. The photoluminescence peak intensity shifts towards higher wavelengths and the full width at half maximum increases with increase in temperature from 5 to 45 °C. We use a Hamiltonian system considering the effective mass approximation to formulate the carrier concentrations. The band gap narrowing value determined by a simple formula amounts to 59.15 meV and displays N1/3 dependence at higher densities. The carrier density dependence conveys that the redshift of the spectral emission is due to band gap narrowing.

Micro laser welding of polymer microstructures using low power laser diodes

2007 ◽  
Vol 33 (1-2) ◽  
pp. 198-205 ◽  
Author(s):  
T. Ussing ◽  
L. V. Petersen ◽  
C. B. Nielsen ◽  
B. Helbo ◽  
L. Højslet
Keyword(s):  
Laser Welding ◽  
Low Power ◽  
Laser Diodes ◽  
Power Laser ◽  
Polymer Microstructures ◽  
Micro Laser Welding

High-efficiency, zero-bias waveguide pin photodiode for low-power-consumption optical hybrid modules

1997 ◽  
Vol 33 (2) ◽  
pp. 160 ◽  
Author(s):  
Y. Muramoto ◽  
K. Kato ◽  
A. Kozen ◽  
M. Ueki ◽  
K. Noguchi ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Efficiency ◽  
Low Power Consumption ◽  
Zero Bias ◽  
Pin Photodiode

scholarly journals Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias

AIP Advances ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 085218
Author(s):  
Tsuyoshi Takahashi ◽  
Kenichi Kawaguchi ◽  
Masaru Sato ◽  
Michihiko Suhara ◽  
Naoya Okamoto
Keyword(s):  
Energy Harvesting ◽  
Low Power ◽  
Zero Bias

Reliability of low-power laser diodes

1995 ◽  
Author(s):  
Richard H. Maurer ◽  
C. Brent Bargeron ◽  
Elbert Nhan ◽  
Terry E. Phillips
Keyword(s):  
Low Power ◽  
Laser Diodes ◽  
Power Laser

Low-power, temperature-resistant IR range semiconductor laser diodes for automotive applications

2019 ◽  
Author(s):  
Simona Pūkienė ◽  
Jan Devenson ◽  
Vladimir Agafonov ◽  
Algirdas Jasinskas ◽  
Evelina Dudutienė ◽  
...  
Keyword(s):  
Low Power ◽  
Semiconductor Laser ◽  
Laser Diodes ◽  
Automotive Applications ◽  
Semiconductor Laser Diodes

Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition

2019 ◽  
Vol 12 (10) ◽  
pp. 106502
Author(s):  
Tsuyoshi Takahashi ◽  
Kenichi Kawaguchi ◽  
Masaru Sato ◽  
Naoya Okamoto ◽  
Michihiko Suhara
Keyword(s):  
Low Power ◽  
Type Ii ◽  
Zero Bias ◽  
Rf Signals ◽  
Bias Condition
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