Monodispersed hierarchical ZnGa2O4 microflowers for self-powered solar-blind detection

2016 ◽  
Vol 4 (15) ◽  
pp. 3113-3118 ◽  
Author(s):  
Yue Teng ◽  
Le Xin Song ◽  
Wei Liu ◽  
Zhe Yuan Xu ◽  
Qing Shan Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Bias Voltage ◽  
Dark Current ◽  
Blind Detection ◽  
Current Ratio ◽  
Zero Bias ◽  
Single Crystalline ◽  
Short Response Time ◽  
Solar Blind ◽  
Self Powered

We successfully synthesized ZnGa2O4 microflowers self-assembled by hexagonal single-crystalline nanopetals. The ZnGa2O4 crystal exhibits improved solar-blind detection performance such as short response time, large light to dark current ratio and high photocurrent stability under zero bias voltage.

AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications

2000 ◽  
Vol 639 ◽  
Author(s):  
P. Lamarre ◽  
A. Hairston ◽  
S. Tobin ◽  
K. K. Wong ◽  
M. F. Taylor ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Dark Current ◽  
Current Data ◽  
Conduction Model ◽  
Zero Bias ◽  
Imaging Results ◽  
Solar Blind ◽  
Uv Response ◽  
Full Depletion ◽  
Back Illuminated

ABSTRACTThis paper presents UV imaging results for a 256×256 AlGaN Focal Plane Array that uses a back-illuminated AlGaN heterostructure p-i-n photodiode array, with 30×30 μm2 unit cells, operating at zero bias voltage, with a narrow-band UV response between 310 and 325 nm. The 256×256 array was fabricated from a multilayer AlGaN film grown by MOCVD on a sapphire substrate. The UV response operability (>0.4×average) was 94.8%, and the UV response uniformity (σ/μ) was 16.8%. Data are also presented for back-illuminated AlGaN p-i-n photodiodes from other films with cutoff wavelengths ranging between 301 and 364 nm. Data for variable-area diagnostic arrays of p-i-n AlGaN photodiodes with a GaN absorber (cutoff=364 nm) show: (1) high external quantum efficiency (50% at V=0 and 62% at V=-9 V); (2) the dark current is proportional to junction area, not perimeter; (3) the forward and reverse currents are uniform (σ/μ=50% for forty 30×30 μm2 diodes at V=−40 V); (4) the reverse-bias dark current data versus temperature and bias voltage can be fit very well by a hopping conduction model; and (5) capacitance versus voltage data are consistent with nearly full depletion of the unintentionally-doped 0.4 μm thick GaN absorber layer and imply a donor concentration of 3-4×1016 cm−3.

scholarly journals Solar-Blind Photodetector Based on NaTaO3/TiO2 Composite Film with Enhanced Photoelectric Performance

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1178
Author(s):  
Min Zhang ◽  
Zhenjiang Li ◽  
Yunfei Zhao ◽  
Zhaofeng Wu ◽  
Jun Zhang ◽  
...  
Keyword(s):  
Response Time ◽  
Dark Current ◽  
High Performance ◽  
Uv Light ◽  
Fast Response ◽  
Current Ratio ◽  
Coated Glass Substrate ◽  
Ultraviolet Detectors ◽  
Photoelectric Performance ◽  
Solar Blind

In this study, ultraviolet detectors based on NaTaO3/TiO2 were fabricated with enhanced detection performance towards solar-blind (200–280 nm) light. A TiO2 seed layer was introduced and served as a buffer layer between the fluorine tin oxide (FTO)-coated glass substrate and the TiO2 film, which increased the adhesion between them. The periodic stability and photoelectric characteristics of the detectors were studied and analyzed. The detectors showed a high performance when illuminated by 265 nm and 254 nm UV light. At −15 V bias, the dark current of the detector was only 70 pA. Under the bias of −15 V and the illumination of 254 nm, the maximum photo-to-dark current ratio reached 20, and the response time was less than 300 ms. Moreover, the detector exhibited a fast response time and remained very stable after numerous testing cycles. These results demonstrate the potential application of NaTaO3/TiO2 composites in UV detection.

scholarly journals Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Amir Muhammad Afzal ◽  
In-Gon Bae ◽  
Yushika Aggarwal ◽  
Jaewoo Park ◽  
Hye-Ryeon Jeong ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Bias Voltage ◽  
High Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Zero Bias ◽  
Decay Times ◽  
Order Of Magnitude ◽  
Self Powered

AbstractHybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

scholarly journals Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio

2018 ◽  
Vol 39 (11) ◽  
pp. 1696-1699 ◽  
Author(s):  
Yaxuan Liu ◽  
Lulu Du ◽  
Guangda Liang ◽  
Wenxiang Mu ◽  
Zhitai Jia ◽  
...  
Keyword(s):  
Dark Current ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Fast Response ◽  
Current Ratio ◽  
Solar Blind ◽  
Effect Transistor

scholarly journals Flexible Solar-Blind Ga2O3 Ultraviolet Photodetectors With High Responsivity and Photo-to-Dark Current Ratio

2019 ◽  
Vol 11 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Zhe Li ◽  
Yue Hao ◽  
Chunfu Zhang ◽  
Yu Xu ◽  
Jiaqi Zhang ◽  
...  
Keyword(s):  
Dark Current ◽  
Current Ratio ◽  
High Responsivity ◽  
Solar Blind ◽  
Ultraviolet Photodetectors

scholarly journals Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3

RSC Advances ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 6341-6345 ◽  
Author(s):  
Chao Yang ◽  
Hongwei Liang ◽  
Zhenzhong Zhang ◽  
Xiaochuan Xia ◽  
Pengcheng Tao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Zero Bias ◽  
Solar Blind ◽  
Self Powered

A Cu SBD solar-blind photodetector was fabricated based on the single crystal β-Ga2O3. The device can work at zero bias.

Construction of a β-Ga2O3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications

2020 ◽  
Vol 8 (15) ◽  
pp. 5071-5081 ◽  
Author(s):  
Zeng Liu ◽  
Shan Li ◽  
Zuyong Yan ◽  
Yuanyuan Liu ◽  
Yusong Zhi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Blind Detection ◽  
Dual Mode ◽  
Zero Bias ◽  
Solar Blind

A dual-mode, sensitive β-Ga2O3 MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 1011 Jones.

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