Evidence For Non-Correlation Between The 0.15 eV And 0.44 eV Cu-Related Acceptor Levels In GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
K. Leosson ◽  
H. P. Gislason
Keyword(s):  
Reverse Bias ◽  
Deep Level ◽  
Current Transient ◽  
Zero Bias ◽  
Lithium Diffusion ◽  
Transient Spectroscopy ◽  
Plasma Hydrogenation

AbstractWe present investigations on the two dominating acceptor levels observed in Cu-diffused GaAs which have frequently been attributed to the two ionization levels of a double CuGa acceptor. We employed plasma hydrogenation and lithium diffusion followed by reverse-bias and zero-bias annealing to passivate and subsequently reactivate the Cu-related acceptor levels. Deep-level current-transient spectroscopy measurements reveal that the two levels are independently reactivated, strongly indicating that they arise from different defects.

scholarly journals Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 279-284 ◽  
Author(s):  
O.F. Vyvenko ◽  
N.V. Bazlov ◽  
M.V. Trushin ◽  
A.A. Nadolinski ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Hydrogen ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Extended Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
Plasma Hydrogenation ◽  
Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

scholarly journals Characterization of deep level defects in thermally annealed Fe‐doped semi‐insulating InP by photoinduced current transient spectroscopy

1992 ◽  
Vol 61 (21) ◽  
pp. 2583-2585 ◽  
Author(s):  
A. Kalboussi ◽  
G. Marrakchi ◽  
G. Guillot ◽  
K. Kainosho ◽  
O. Oda
Keyword(s):  
Deep Level ◽  
Current Transient ◽  
Transient Spectroscopy

scholarly journals Fermi Level Pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy

2000 ◽  
Vol 5 (S1) ◽  
pp. 936-942 ◽  
Author(s):  
H. Witte ◽  
A. Krtschil ◽  
M. Lisker ◽  
D. Rudloff ◽  
J. Christen ◽  
...  
Keyword(s):  
Fermi Level ◽  
Deep Level ◽  
Deep Levels ◽  
Admittance Spectroscopy ◽  
Zero Bias ◽  
Fermi Level Pinning ◽  
Organic Vapor ◽  
Pinning Effect ◽  
Metal Organic ◽  
Transient Spectroscopy

In GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects detected by thermal admittance spectroscopy as compared for deep level transient spectroscopy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.

Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy

1999 ◽  
Vol 595 ◽  
Author(s):  
H. Witte ◽  
A. Krtschil ◽  
M. Lisker ◽  
D. Rudloff ◽  
J. Christen ◽  
...  
Keyword(s):  
Fermi Level ◽  
Deep Level ◽  
Deep Levels ◽  
Admittance Spectroscopy ◽  
Zero Bias ◽  
Fermi Level Pinning ◽  
Organic Vapor ◽  
Pinning Effect ◽  
Metal Organic ◽  
Transient Spectroscopy

AbstractIn GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects de-tected by thermal admittance spectroscopy as compared for deep level transient spectros-copy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.

Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

2012 ◽  
Vol 717-720 ◽  
pp. 271-274
Author(s):  
Seiji Nishikawa ◽  
Ryota Okada ◽  
Hideharu Matsuura
Keyword(s):  
Discharge Current ◽  
High Purity ◽  
Deep Level ◽  
Energy Levels ◽  
Reverse Current ◽  
Current Transient ◽  
Emission Rates ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Surface Leakage

To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a Schottky barrier diode, because transient capacitance methods such as deep level transient spectroscopy and isothermal capacitance transient spectroscopy are feasible only in low-resistivity semiconductors. The reverse current consists the reverse current through the balk and the surface leakage current of the diode. It is elucidated that the sacrifice oxidation could dramatically reduce the surface currents of diodes in the case of high-purity semi-insulating 4H-SiC, suggesting that the densities and emission rates of traps in the bulk of the SiC can be determined from the transient reverse current.

Deep Trap Concentrations from Three-Dimensional Carrier Concentration Profiles in Hydride Vapor Pressure Epitaxially-Grown GaN

2006 ◽  
Vol 251-252 ◽  
pp. 35-50
Author(s):  
N.C. Halder ◽  
J. Martin ◽  
D. Sisler Jr.
Keyword(s):  
Vapor Pressure ◽  
Carrier Concentration ◽  
Reverse Bias ◽  
Deep Level ◽  
Three Dimensional ◽  
Deep Trap ◽  
Concentration Profiles ◽  
Ionization Energies ◽  
Transient Spectroscopy ◽  
Effective Carrier

We have investigated deep trap concentrations in hydride vapor pressure epitaxy (HVPE) - grown GaN by measuring three-dimensional carrier concentration profiles and ionization energies. Schottky contacts were fabricated on 28-68μm thick films using Ni/Au contacts. Extensive capacitance-voltage measurements were made in the temperature range 100-350K at reverse bias voltages in the range 0 to –5V. Effective carrier concentrations and ionization energies were determined from three-dimensional plots of concentration-temperature-depth. Carrier concentration versus temperature plots show slowly changing three-step behavior. During the first step, all the plots rise linearly up to about 200K reaching respective plateaus before reversing courses downwards again linearly. Ionization energy plots, on the other hand, are almost linear all the way up to 350 K showing some tendency of upward bending. Trap concentrations were determined from carrier concentrations and previously measured deep level transient spectroscopy (DLTS) plots as function of reverse bias voltages. In almost every case, trap concentrations also rise linearly with increasing depth in the samples.

Defects Created by 25 keV Hydrogen Implantation in n-type GaN

2001 ◽  
Vol 693 ◽  
Author(s):  
F. D. Auret ◽  
W. E. Meyer ◽  
H. A. van Laarhoven ◽  
S. A. Goodman ◽  
M. J. Legodi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Isothermal Annealing ◽  
Deep Level ◽  
High Energy ◽  
Zero Bias ◽  
Hydrogen Implantation ◽  
Proton Implantation ◽  
Transient Spectroscopy ◽  
Annealing Experiments

AbstractWe have studied defects introduced in n-GaN during 25 keV hydrogen and 40 keV He implantation using deep level transient spectroscopy (DLTS). These measurements revealed that 25 keV hydrogen implantation introduces a complex set of electron traps, of which most are different to the defects observed after high-energy (MeV) electron and proton implantation. At least three of the defects detected after 25 keV proton implantation exhibit a metastable character in that they can be reproducibly removed and re-introduced during reverse and zero bias anneal cycles. Isochronal and isothermal annealing experiments yielded low activation energies of approximately 0.1 – 0.2 eV for both processes. By comparison, 40 keV He ion implantation introduced the same metastable defects, but in different relative concentrations.

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