Mechanical Behavior of Methyl-Silsesquioxane Based Nano Porous Low-K Film Using by Ultraviolet Curing Method

2016 ◽  
Vol 8 (10) ◽  
pp. 1963-1967 ◽  
Author(s):  
Soon Hyeong Kwon ◽  
Eunmi Choi ◽  
Areum Kim ◽  
Keunwon Kang ◽  
Minwoo Nam ◽  
...  
Keyword(s):  
Mechanical Behavior ◽  
Ultraviolet Curing ◽  
Methyl Silsesquioxane ◽  
Curing Method ◽  
Low K

Robust spin-on-glass poly(methyl)silsesquioxane-based low-k materials derived from a cyclic siloxane precursor

RSC Advances ◽  
2015 ◽  
Vol 5 (82) ◽  
pp. 66511-66517 ◽  
Author(s):  
Albert S. Lee ◽  
Sung Yeoun Oh ◽  
Seung-Sock Choi ◽  
He Seung Lee ◽  
Seung Sang Hwang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Cyclic Siloxane ◽  
Low Dielectric ◽  
Methyl Silsesquioxane ◽  
Low K

Low dielectric constant poly(methyl)silsesquioxane spin-on-glass resins incorporating a cyclic precursor exhibited exceptional mechanical properties to withstand CMP processes.

Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

2011 ◽  
Vol 519 (11) ◽  
pp. 3619-3626 ◽  
Author(s):  
Premysl Marsik ◽  
Adam M. Urbanowicz ◽  
Patrick Verdonck ◽  
David De Roest ◽  
Hessel Sprey ◽  
...  
Keyword(s):  
Material Properties ◽  
Dielectric Material ◽  
Ultraviolet Curing ◽  
Plasma Damage ◽  
Damage Resistance ◽  
Low K

Depth dependence of ultraviolet curing of organosilicate low-k thin films

2008 ◽  
Vol 103 (6) ◽  
pp. 064108 ◽  
Author(s):  
Taek-Soo Kim ◽  
Naoto Tsuji ◽  
Nathan Kemeling ◽  
Kiyohiro Matsushita ◽  
Dmytro Chumakov ◽  
...  
Keyword(s):  
Thin Films ◽  
Ultraviolet Curing ◽  
Depth Dependence ◽  
Low K

Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane-based low-k insulator films

2014 ◽  
Vol 212 (5) ◽  
pp. 1153-1157 ◽  
Author(s):  
Shiro Ozaki ◽  
Kozo Makiyama ◽  
Toshihiro Ohki ◽  
Yoichi Kamada ◽  
Masaru Sato ◽  
...  
Keyword(s):  
Current Collapse ◽  
Gan Hemts ◽  
Methyl Silsesquioxane ◽  
Low K

Elimination of O2 plasma damage of low-k methyl silsesquioxane film by As implantation

2001 ◽  
Vol 397 (1-2) ◽  
pp. 90-94 ◽  
Author(s):  
C.Y. Wang ◽  
J.Z. Zheng ◽  
Z.X. Shen ◽  
Y. Lin ◽  
A.T.S. Wee
Keyword(s):  
Plasma Damage ◽  
Methyl Silsesquioxane ◽  
Low K ◽  
O2 Plasma
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