scholarly journals MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate

2018 ◽  
Vol 2018 ◽  
pp. 1-5
Author(s):  
R. R. Reznik ◽  
K. P. Kotlyar ◽  
I. V. Ilkiv ◽  
A. I. Khrebtov ◽  
I. P. Soshnikov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Buffer Layer ◽  
Silicon Substrate ◽  
Lattice Mismatch ◽  
Structural Quality ◽  
Optical Studies ◽  
Mbe Growth

The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A3B5 NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.

scholarly journals MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates

2018 ◽  
Vol 52 (5) ◽  
pp. 522
Author(s):  
R.R. Reznik ◽  
K.P. Kotlyar ◽  
I.P. Soshnikov ◽  
S.A. Kukushkin ◽  
A.V. Osipov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Buffer Layer ◽  
Structural Properties ◽  
Mole Fraction ◽  
Silicon Substrate ◽  
Mbe Growth ◽  
Inas Nanowires ◽  
First Time

AbstractThe possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.

scholarly journals Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate

2018 ◽  
Vol 52 (5) ◽  
pp. 509
Author(s):  
I.V. Shtrom ◽  
N.G. Filosofov ◽  
V.F. Agekian ◽  
M.B. Smirnov ◽  
A.Yu. Serov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Buffer Layer ◽  
Silicon Substrate ◽  
Optical Characteristics ◽  
Gan Nanowires ◽  
Fundamental Possibility ◽  
Nanowires Growth ◽  
Si Doped

AbstractThe aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate

2004 ◽  
Vol 30 (8) ◽  
pp. 641-643 ◽  
Author(s):  
Yu. V. Trushin ◽  
E. E. Zhurkin ◽  
K. L. Safonov ◽  
A. A. Schmidt ◽  
V. S. Kharlamov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Mbe Growth

Stress Controlled MBE-growth of GaN:Mg and GaN:Si

1997 ◽  
Vol 482 ◽  
Author(s):  
Y. Kim ◽  
R. Klockenbrink ◽  
C. Kisielowski ◽  
J. Krueger ◽  
D. Corlatan ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Defect Formation ◽  
Lattice Mismatch ◽  
Flux Ratio ◽  
Layer Growth ◽  
Mbe Growth ◽  
Lattice Constants ◽  
Thermal Expansion Coefficients ◽  
Stress Changes ◽  
Formation Energies

AbstractThe stress in GaN thin films grown on sapphire is shown to be determined by lattice mismatch, by differences in thermal-expansion-coefficients and by the incorporation of point defects. It can be controlled by the buffer layer thickness, the buffer layer growth temperature, the V/III flux ratio, and by doping. It is argued that a Fermi-level dependence of defect formation energies affects the material stoichiometry and thereby lattice constants and stresses. We observed that stress relaxation occurred if the stresses exceeded a critical compressive or tensile stress value. The stress changes materials properties. As an example, it is demonstrated that the electron Hall mobility in GaN:Si can be increased with constant electron carrier concentration if large compressive stress is present.

The Investigation of Porous AlXGa1-XN Layers on Si (111) Substrate with GaN/AlN as Buffer Layer

2011 ◽  
Vol 364 ◽  
pp. 164-168
Author(s):  
Yushamdan Yusof ◽  
Mohd Zaki Mohd Yusoff ◽  
Mahmood Ainorkhilah ◽  
Hassan Zainuriah ◽  
Abu Hassan Haslan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Electrochemical Etching ◽  
High Quality ◽  
Pl Spectra ◽  
Anisotropic Structures ◽  
Uv Lamp

High quality undoped AlxGa1-xN with high Ga composition was grown on Si (111) substrate, using GaN/AlN as the buffer layer, by plasma-assisted molecular beam epitaxy (PAMBE). The present work reports on the photoluminescence (PL) studies of porous AlxGa1-xN prepared by ultraviolet (UV) assisted electrochemical etching in a solution of 2 % concentration of KOH electrolyte under illumination of an UV lamp with 500 W power for 30 min. The optical properties of porous AlxGa1-xN sample was compared to the corresponding as-grown GaN. PL studies suggested that the porosity was capable of improving the lattice mismatch induced strain. Porosity induced PL intensity enhancement was found in nanoporous sample. The resulting nanoporous AlxGa1-xN display red-shifted PL spectra compared to the as-grown AlxGa1-xN. Appearance of the red-shifted emission is correlated with the development of highly anisotropic structures in the morphology.

GaAs Heteroepitaxy on Substrate-Engineered Silicon Using SixGe1–x Multilayer Structures

1990 ◽  
Vol 198 ◽  
Author(s):  
J.B. Posthill ◽  
R. Venkatasubramanian ◽  
D.P. Malta ◽  
S.V. Hattangady ◽  
G.G. Fountain ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Silicon Substrate ◽  
Multilayer Structure ◽  
Lattice Mismatch ◽  
Multilayer Structures ◽  
Threading Dislocation ◽  
The Novel ◽  
Dislocation Reduction ◽  
Novel Concept ◽  
Initial Results

ABSTRACTThe novel concept of using a SixGe1–x multilayer structure as a buffer layer between a silicon substrate and a GaAs epitaxial layer to accommodate the GaAs/Si 4.1% lattice mismatch is introduced. Initial results using a 340 nm trilayer SixGe1–x multilayer structure are presented and are critically assessed. Significant potential is demonstrated, and the work to date indicates that certain guidelines and procedures must be adhered to for this method of threading dislocation reduction to be effective.

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

scholarly journals MOCVD Grown HgCdTe Heterostructures for Medium Wave Infrared Detectors

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 611
Author(s):  
Waldemar Gawron ◽  
Jan Sobieski ◽  
Tetiana Manyk ◽  
Małgorzata Kopytko ◽  
Paweł Madejczyk ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Infrared Detectors ◽  
Lattice Mismatch ◽  
Layer Growth ◽  
Ex Situ ◽  
Current Status ◽  
Organic Chemical ◽  
Infrared Band ◽  
Donor And Acceptor ◽  
Wide Range

This paper presents the current status of medium-wave infrared (MWIR) detectors at the Military University of Technology’s Institute of Applied Physics and VIGO System S.A. The metal–organic chemical vapor deposition (MOCVD) technique is a very convenient tool for the deposition of HgCdTe epilayers, with a wide range of compositions, used for uncooled infrared detectors. Good compositional and thickness uniformity was achieved on epilayers grown on 2-in-diameter, low-cost (100) GaAs wafers. Most growth was performed on substrates, which were misoriented from (100) by between 2° and 4° in order to minimize growth defects. The large lattice mismatch between GaAs and HgCdTe required the usage of a CdTe buffer layer. The CdTe (111) B buffer layer growth was enforced by suitable nucleation procedure, based on (100) GaAs substrate annealing in a Te-rich atmosphere prior to the buffer deposition. Secondary-ion mass spectrometry (SIMS) showed that ethyl iodide (EI) and tris(dimethylamino)arsenic (TDMAAs) were stable donor and acceptor dopants, respectively. Fully doped (111) HgCdTe heterostructures were grown in order to investigate the devices’ performance in the 3–5 µm infrared band. The uniqueness of the presented technology manifests in a lack of the necessity of time-consuming and troublesome ex situ annealing.

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

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