GaAs Heteroepitaxy on Substrate-Engineered Silicon Using SixGe1–x Multilayer Structures

1990 ◽  
Vol 198 ◽  
Author(s):  
J.B. Posthill ◽  
R. Venkatasubramanian ◽  
D.P. Malta ◽  
S.V. Hattangady ◽  
G.G. Fountain ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Silicon Substrate ◽  
Multilayer Structure ◽  
Lattice Mismatch ◽  
Multilayer Structures ◽  
Threading Dislocation ◽  
The Novel ◽  
Dislocation Reduction ◽  
Novel Concept ◽  
Initial Results

ABSTRACTThe novel concept of using a SixGe1–x multilayer structure as a buffer layer between a silicon substrate and a GaAs epitaxial layer to accommodate the GaAs/Si 4.1% lattice mismatch is introduced. Initial results using a 340 nm trilayer SixGe1–x multilayer structure are presented and are critically assessed. Significant potential is demonstrated, and the work to date indicates that certain guidelines and procedures must be adhered to for this method of threading dislocation reduction to be effective.

scholarly journals MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate

2018 ◽  
Vol 2018 ◽  
pp. 1-5
Author(s):  
R. R. Reznik ◽  
K. P. Kotlyar ◽  
I. V. Ilkiv ◽  
A. I. Khrebtov ◽  
I. P. Soshnikov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Buffer Layer ◽  
Silicon Substrate ◽  
Lattice Mismatch ◽  
Structural Quality ◽  
Optical Studies ◽  
Mbe Growth

The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A3B5 NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.

Threading dislocation reduction in a GaN film with a buffer layer grown at an intermediate temperature

2015 ◽  
Vol 66 (2) ◽  
pp. 214-218
Author(s):  
Youngji Cho ◽  
Jiho Chang ◽  
Joonseok Ha ◽  
Hyun-jae Lee ◽  
Katsushi Fujii ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Intermediate Temperature ◽  
Threading Dislocation ◽  
Dislocation Reduction ◽  
Gan Film

Electron microscopy of GaAs grown on Si- and Ge-based substrates

1991 ◽  
Vol 49 ◽  
pp. 854-855
Author(s):  
D.P. Malta ◽  
J.B. Posthill ◽  
M.L. Timmons ◽  
P.R. Sharps ◽  
R. Venkatasubramanian ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Antiphase Domain ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Thermally Induced ◽  
Induced Stress ◽  
Dislocation Reduction ◽  
Domain Boundaries

A GaAs-on-Si technology is desirable to take advantage of the mobility and direct bandgap of GaAs in combination with the crystalline quality, low cost and established technology of Si. Differences in lattice constant (4.1%), thermal expansion coefficient (a factor of ~ 3), and bonding polarity between the two materials can lead to problems such as: threading dislocation formation, thermally induced stress and delamination, and antiphase domain boundaries (APBs), respectively. The lattice mismatch is responsible for the formation of (necessary) misfit dislocations which can concurrently create threading dislocations with typical densities in the range of 106 - 108cm-2. This density of electrically active defects in a device region is highly undesirable.A proposed scheme for lattice mismatch accommodation and potential threading dislocation reduction has previously been reported in which each layer of a SixGe1-x multilayer structure (MLS) is grown beyond the critical thickness with a progressively higher Ge composition than the previous layer.

TEM characterization of dislocation reduction processes in GaAs/Si

1989 ◽  
Vol 47 ◽  
pp. 590-591
Author(s):  
R.A. Herring ◽  
P.N. Uppal ◽  
S.P. Svensson ◽  
J.S. Ahearn
Keyword(s):  
Lattice Mismatch ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Growth Interface ◽  
Dislocation Reduction ◽  
Dislocation Densities ◽  
Threading Dislocation Density ◽  
Interfacial Dislocations ◽  
Strained Layer Superlattices

A high density of interfacial dislocations are needed at the GaAs/Si interface to alleviate the 4% lattice mismatch between GaAs and Si. Some remnant dislocations thread through the epilayer and follow the growth interface. Current growth methods are not able to obtain acceptable threading dislocation densities (104 – 105) for devices. Many methods can be used to reduce the number of threading dislocations which include misorienting the substrate to enhance the slip of dislocations on specific [110]{111} planes, annealing during and after growth, and adding strained layer superlattices (SLS's) to block dislocations. Conventional TEM (CTEM), performed using a JEM 100c, has been used to characterize threading dislocations in the epilayer of a GaAs/Si material where in situ thermal annealing and SLS's force dislocation reactions and thereby reduce the threading dislocation density. Using TEM we have viewed dislocations under many two-beam diffraction conditions and with the help of a stereogram have determined their Burgers vectors (b), line directions (u) and habit planes (R).

Growth and Characterization of InxGa1−xP(x≤0.38) on GaP(1OO) with a Linearly Graded Buffer Layer by Gas-Source Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
T. P. Chin ◽  
J. C. P. Chang ◽  
K. L. Kavanagh ◽  
C. W. Tu ◽  
P. D. Kirchner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
High Energy ◽  
Threading Dislocation ◽  
Dislocation Loops ◽  
Double Crystal ◽  
X Ray ◽  
Gas Source

ABSTRACTInxGa1−xP(x>0.27) grown on a GaP substrate has a large direct-bandgap, which is suitable for yellow light emission on a transparent substrate. Because of the large lattice mismatch, usually a thick (10–20 μm) graded buffer layer was required to reduce the threading dislocation density. In this work we report that a thin (1.2 μm for x≃0.35), linearly graded buffer layer can filter out dislocations effectively. The structures were grown by gas-source molecular beam epitaxy. Reflection high-energy electron diffraction (RHEED) intensity oscillations and X-ray double-crystal diffraction were used to control and determine the composition, respectively. Threading dislocations are well confined in the buffer layer, as shown under transmission electron microscopy. Dislocation loops injected into the substrate were observed, similar to those observed in the Six Ge1−x/Si system. X-ray analysis also shows that the 3% mismatched buffer layer is fully relaxed. This relaxed buffer layer then can serve as a substrate for further growth. Homojunction and heterojunction light emitting diodes were fabricated to demonstrate the material quality.

Dynamical X-Ray Diffraction Analysis of Triple-Junction Solar Cells on Germanium (001) Substrates

2017 ◽  
Vol 26 (03) ◽  
pp. 1740011
Author(s):  
F. A. Althowibi ◽  
J. E. Ayers
Keyword(s):  
Solar Cells ◽  
Diffraction Analysis ◽  
Buffer Layer ◽  
Triple Junction ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Threading Dislocation Density

We demonstrate the dynamical x-ray diffraction analysis of metamorphic triple-junction solar cells grown on Ge (001) substrates. The solar cells investigated involve an In0.67Ga0.33P top cell, an In0.17Ga0.83As middle cell, and a Ge bottom cell. A graded buffer layer is inserted between the bottom and middle cells for the purpose of accommodating the lattice mismatch. Linearly-graded, step-graded, and S-graded compositional profiles were considered for this buffer layer. The x-ray rocking curve analysis for a number of hkl reflections including 004, 113, 116, 044, 026, and 117 was conducted for the case of Cu Kα1 radiation. We show that the use of non-destructive x-ray analysis allows determination of the threading dislocation densities in the top two cells. In the cases of S-graded or step-graded buffer layers, the buffer threading dislocation density could also be estimated.

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

scholarly journals Racism and Antiracism in the Liberal International Order

2020 ◽  
pp. 1-24
Author(s):  
Zoltán I. Búzás
Keyword(s):  
International Relations ◽  
Racial Inequality ◽  
Racial Diversity ◽  
International Order ◽  
Interdisciplinary Studies ◽  
Racial Equality ◽  
The Novel ◽  
Current Regime ◽  
Novel Concept ◽  
Comprehensive Framework

Abstract Formal racial equality is a key aspect of the current Liberal International Order (LIO). It is subject to two main challenges: resurgent racial nationalism and substantive racial inequality. Combining work in International Relations with interdisciplinary studies on race, I submit that these challenges are the latest iteration of struggles between two transnational coalitions over the LIO's central racial provisions, which I call racial diversity regimes (RDRs). The traditional coalition has historically favored RDRs based on racial inequality and racial nationalism. The transformative coalition has favored RDRs based on racial equality and nonracial nationalism. I illustrate the argument by tracing the development of the liberal order's RDR as a function of intercoalitional struggles from one based on racial nationalism and inequality in 1919 to the current regime based on nonracial nationalism and limited equality. Today, racial nationalists belong to the traditional coalition and critics of racial inequality are part of the transformative coalition. The stakes of their struggles are high because they will determine whether we will live in a more racist or a more antiracist world. This article articulates a comprehensive framework that places race at the heart of the liberal order, offers the novel concept of “embedded racism” to capture how sovereignty shields domestic racism from foreign interference, and proposes an agenda for mainstream International Relations that takes race seriously.

scholarly journals Using green infrastructure to stimulate discourse with and for planning practice: experiences with fuzzy concepts from a pan-European, a national and a local perspective

2021 ◽  
Author(s):  
Rieke Hansen ◽  
Martina van Lierop ◽  
Werner Rolf ◽  
Damjana Gantar ◽  
Ina Šuklje Erjavec ◽  
...  
Keyword(s):  
Green Infrastructure ◽  
Regional Cooperation ◽  
Knowledge Exchange ◽  
Stakeholder Involvement ◽  
The Novel ◽  
Planning Practice ◽  
Regional Project ◽  
Development Processes ◽  
Guidance Documents ◽  
Novel Concept

AbstractConcepts such as green infrastructure, nature-based solutions, and ecosystem services gained popularity in recent discourses on urban planning. Despite their recognition as innovative concepts, all of them share a degree of ambiguity. Fuzziness can be a weakness but also an opportunity to shape novel concepts together with the stakeholders that are supposed to implement them in the planning practice. The paper traces concept development processes of green infrastructure through transdisciplinary knowledge exchange in three different projects, a European and a national research project and a local city-regional project as part of an EU regional cooperation project. In all projects, the green infrastructure concept evolved in different stages. Stakeholder involvement during these stages span from consultation to co-creation. The cases reveal two different approaches: concepts that are developed “for planning practice” might be based on a plethora of insight via consultation, while those “with planning practice” foster co-creation and might result in high acceptance among the involved stakeholders. Depending on the purpose of the novel concept, each approach can be beneficial and result in practice-related and operational products, such as guidance documents or planning strategies. However, the cases also show that in any new context an exchange about fuzzy concepts is not only needed but also a chance to stimulate cooperation and joint understanding about urban challenges and how to address them.

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