scholarly journals Influence of an Advanced Buffer Layer on the Optical Properties of an InGaN/GaN MQW Grown on a (111) Silicon Substrate

2007 ◽  
Vol 50 (3) ◽  
pp. 797 ◽  
Author(s):  
D. R. Hang ◽  
M. M. C. Chou ◽  
M. H. Hsieh ◽  
M. Heuken
Keyword(s):  
Optical Properties ◽  
Buffer Layer ◽  
Silicon Substrate

scholarly journals Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate

2018 ◽  
Vol 52 (5) ◽  
pp. 509
Author(s):  
I.V. Shtrom ◽  
N.G. Filosofov ◽  
V.F. Agekian ◽  
M.B. Smirnov ◽  
A.Yu. Serov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Buffer Layer ◽  
Silicon Substrate ◽  
Optical Characteristics ◽  
Gan Nanowires ◽  
Fundamental Possibility ◽  
Nanowires Growth ◽  
Si Doped

AbstractThe aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

scholarly journals MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate

2018 ◽  
Vol 2018 ◽  
pp. 1-5
Author(s):  
R. R. Reznik ◽  
K. P. Kotlyar ◽  
I. V. Ilkiv ◽  
A. I. Khrebtov ◽  
I. P. Soshnikov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Buffer Layer ◽  
Silicon Substrate ◽  
Lattice Mismatch ◽  
Structural Quality ◽  
Optical Studies ◽  
Mbe Growth

The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A3B5 NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

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