Passivation of III/V-based Compound Semiconductor Devices Using High-Density Plasma Deposited Silicon Nitride Films

Highly robust ultrathin silicon nitride films grown at low-temperature by microwave-excitation high-density plasma for giga scale integration

IEEE Transactions on Electron Devices ◽

10.1109/16.848279 ◽

2000 ◽

Vol 47 (7) ◽

pp. 1370-1374 ◽

Cited By ~ 30

Author(s):

K. Sekine ◽

Y. Saito ◽

M. Hirayama ◽

T. Ohmi

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

High Density ◽

Silicon Nitride Films ◽

Scale Integration ◽

Microwave Excitation ◽

Density Plasma

Download Full-text

Silicon nitride films prepared by high-density plasma chemical vapor deposition for solar cell applications

Surface and Coatings Technology ◽

10.1016/s0257-8972(01)01554-7 ◽

2002 ◽

Vol 153 (1) ◽

pp. 67-71 ◽

Cited By ~ 28

Author(s):

S.H. Lee ◽

I. Lee ◽

J. Yi

Keyword(s):

Chemical Vapor Deposition ◽

Solar Cell ◽

Silicon Nitride ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Density ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Silicon Nitride Films ◽

Density Plasma

Download Full-text

Correlation Between Composition and Stress for High Density Plasma CVD Silicon Nitride Films

Journal of The Electrochemical Society ◽

10.1149/1.3263906 ◽

2010 ◽

Vol 157 (2) ◽

pp. G33 ◽

Cited By ~ 2

Author(s):

R. E. Sah ◽

H. Baumann ◽

R. Driad ◽

J. Wagner

Keyword(s):

Silicon Nitride ◽

High Density ◽

Plasma Cvd ◽

Silicon Nitride Films ◽

Density Plasma

Download Full-text

Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

Applied Surface Science ◽

10.1016/s0169-4332(03)00423-9 ◽

2003 ◽

Vol 216 (1-4) ◽

pp. 246-251 ◽

Cited By ~ 3

Author(s):

Ichiro Ohshima ◽

Weitao Cheng ◽

Yasuhiro Ono ◽

Masaaki Higuchi ◽

Masaki Hirayama ◽

...

Keyword(s):

Silicon Nitride ◽

Gate Dielectrics ◽

High Density ◽

Density Plasma

Download Full-text

The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 $^{\circ}{\hbox{C}}$) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/tsm.2010.2045582 ◽

2010 ◽

Vol 23 (2) ◽

pp. 328-339

Author(s):

Yuji Saito ◽

Katsuyuki Sekine ◽

Ryu Kaihara ◽

Masaki Hirayama ◽

Shigetoshi Sugawa ◽

...

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Growth Rates ◽

Silicon Oxide ◽

Semiconductor Device ◽

High Growth ◽

Device Fabrication ◽

Plasma System ◽

Silicon Nitride Films ◽

Density Plasma

Download Full-text

Silicon Nitride Thin Film Deposition for Microelectronics and Microsystem Technologies. Part 4. Processes in the Flow Reactors with High-Density Plasma Activation

Nano- i Mikrosistemnaya Tehnika ◽

10.17587/nmst.20.585-595 ◽

2018 ◽

Vol 20 (10) ◽

pp. 585-595

Author(s):

V.Yu. Vasilev ◽

◽

Keyword(s):

Thin Film ◽

Silicon Nitride ◽

Thin Film Deposition ◽

Film Deposition ◽

High Density ◽

Flow Reactors ◽

Plasma Activation ◽

Microsystem Technologies ◽

Density Plasma

Download Full-text

Advantage of silicon nitride gate insulator transistor by using microwave excited high-density plasma for applying 100nm technology node

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979639 ◽

2005 ◽

Cited By ~ 2

Author(s):

S. Sugawa ◽

I. Ohshima ◽

H. Ishino ◽

Y. Saito ◽

M. Hirayama ◽

...

Keyword(s):

Silicon Nitride ◽

High Density ◽

Gate Insulator ◽

Technology Node ◽

Density Plasma

Download Full-text

Study on SONOS Nonvolatile Memory Technology Using High-Density Plasma CVD Silicon Nitride

Electrochemical and Solid-State Letters ◽

10.1149/1.1695537 ◽

2004 ◽

Vol 7 (6) ◽

pp. G113 ◽

Cited By ~ 7

Author(s):

T. C. Chang ◽

S. T. Yan ◽

P. T. Liu ◽

C. W. Chen ◽

Y. C. Wu ◽

...

Keyword(s):

Silicon Nitride ◽

Nonvolatile Memory ◽

High Density ◽

Plasma Cvd ◽

Density Plasma

Download Full-text

Low-temperature deposition pathways to silicon nitride, amorphous silicon, polycrystalline silicon, and n type amorphous silicon films using a high density plasma system

IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science ◽

10.1109/plasma.1997.605152 ◽

2002 ◽

Author(s):

Sanghoon Bae ◽

D. Farber ◽

A. Kalkan ◽

S. Fonash

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

High Density ◽

Silicon Films ◽

Plasma System ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Density Plasma

Download Full-text

A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.582195 ◽

2000 ◽

Vol 18 (2) ◽

pp. 372-376 ◽

Cited By ~ 66

Author(s):

J. Yota ◽

J. Hander ◽

A. A. Saleh

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Inductively Coupled Plasma ◽

Chemical Vapor ◽

Inductively Coupled ◽

Silicon Nitride Films ◽

Plasma High Density ◽

Pressure Chemical ◽

Density Plasma

Download Full-text