Correlation Between Composition and Stress for High Density Plasma CVD Silicon Nitride Films

2010 ◽  
Vol 157 (2) ◽  
pp. G33 ◽  
Author(s):  
R. E. Sah ◽  
H. Baumann ◽  
R. Driad ◽  
J. Wagner
Keyword(s):  
Silicon Nitride ◽  
High Density ◽  
Plasma Cvd ◽  
Silicon Nitride Films ◽  
Density Plasma

Study on SONOS Nonvolatile Memory Technology Using High-Density Plasma CVD Silicon Nitride

2004 ◽  
Vol 7 (6) ◽  
pp. G113 ◽  
Author(s):  
T. C. Chang ◽  
S. T. Yan ◽  
P. T. Liu ◽  
C. W. Chen ◽  
Y. C. Wu ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Nonvolatile Memory ◽  
High Density ◽  
Plasma Cvd ◽  
Density Plasma

Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

2003 ◽  
Vol 216 (1-4) ◽  
pp. 246-251 ◽  
Author(s):  
Ichiro Ohshima ◽  
Weitao Cheng ◽  
Yasuhiro Ono ◽  
Masaaki Higuchi ◽  
Masaki Hirayama ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectrics ◽  
High Density ◽  
Density Plasma

Properties of CAT-CVD Silicon Nitride Films and Their Application as Passivation Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Shinya Okada ◽  
Hideki Matsumura
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Plasma Cvd ◽  
New Device ◽  
Silicon Nitride Films ◽  
Chemical Etch ◽  
Substrate Temperatures

AbstractSilicon nitride (SiNx) films have been successfully synthesized by the catalytic chemical vapor deposition (cat-CVD) method using a gaseous mixture of silane (SiH4) and ammonia (NH3). In the method, the deposition gases are decomposed by catalytic cracking reactions with a high temperature (1700°C) catalyzer near the substrates, and SiNx films can be deposited at substrate temperatures lower than 400°C without using plasma or photochemical excitation. Nearly stoichiometric Si3N4 films are formed when the flow ratio of NH3 exceeds over 100 times of that of SiH4. These cat-CVD SiNx films show excellent properties. That is, the resistivity, the breakdown voltage, the chemical etch resistance and hydrogen content in the films are almost equivalent to those of high-temperature thermal CVD films. In addition, the surface diffusion length of depositing species is about several-tens μπι and step-coverage itself is conformai. Thus, the cat-CVD SiNx films are regarded not only as a new device passivation films superior to the conventional plasma-CVD films but as a gate insulator for electon devices due to their high quality.

Characterization of high-density plasma CVD USG film

1997 ◽  
Author(s):  
Wei Lu ◽  
Jia Z. Zheng ◽  
John Sudijuno ◽  
Hoon L. Yap ◽  
Kok S. Fam ◽  
...  
Keyword(s):  
High Density ◽  
Plasma Cvd ◽  
Density Plasma
Sign in / Sign up

Export Citation Format

Share Document