Effect of Various Slurry Injection System Configurations on Removal Rates of Silicon Dioxide Using a Ceria-Based Chemical Mechanical Planarization Slurry

2017 ◽  
Vol 6 (7) ◽  
pp. P449-P454 ◽  
Author(s):  
Ruochen Han ◽  
Yasa Sampurno ◽  
Matthew Bahr ◽  
Morgan Skillman ◽  
Leonard Borucki ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Chemical Mechanical Planarization ◽  
Injection System ◽  
Removal Rates ◽  
System Configurations ◽  
Slurry Injection

Analysis of A Novel Slurry Injection System in Chemical Mechanical Planarization

2011 ◽  
Vol 50 (5S1) ◽  
pp. 05EC01 ◽  
Author(s):  
Anand Meled ◽  
Yun Zhuang ◽  
Yasa Adi Sampurno ◽  
Siannie Theng ◽  
Yubo Jiao ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Injection System ◽  
Slurry Injection

Application of a Slurry Injection System to Cobalt “Buff Step” Chemical Mechanical Planarization

2018 ◽  
Vol 7 (4) ◽  
pp. P170-P174 ◽  
Author(s):  
Calliandra Stuffle ◽  
Ruochen Han ◽  
Yasa Sampurno ◽  
Siannie Theng ◽  
Wei-Tsu Tseng ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Injection System ◽  
Slurry Injection

Analysis of A Novel Slurry Injection System in Chemical Mechanical Planarization

2011 ◽  
Vol 50 (5) ◽  
pp. 05EC01 ◽  
Author(s):  
Anand Meled ◽  
Yun Zhuang ◽  
Yasa Adi Sampurno ◽  
Siannie Theng ◽  
Yubo Jiao ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Injection System ◽  
Slurry Injection

(Invited) Performance Analysis of a Novel Slurry Injection System for Oxide Chemical Mechanical Planarization

2013 ◽  
Vol 52 (1) ◽  
pp. 591-596 ◽  
Author(s):  
L. Borucki ◽  
Y. Zhuang ◽  
Y. Sampurno ◽  
A. Philipossian ◽  
S. Kreutzer-Schneeweiss
Keyword(s):  
Performance Analysis ◽  
Chemical Mechanical Planarization ◽  
Injection System ◽  
Slurry Injection

scholarly journals Slurry Injection Schemes on the Extent of Slurry Mixing and Availability during Chemical Mechanical Planarization

Micromachines ◽  
2017 ◽  
Vol 8 (6) ◽  
pp. 170 ◽  
Author(s):  
Matthew Bahr ◽  
Yasa Sampurno ◽  
Ruochen Han ◽  
Ara Philipossian
Keyword(s):  
Chemical Mechanical Planarization ◽  
Slurry Injection

Application of the Stribeck+ Curve in Silicon Dioxide Chemical Mechanical Planarization

2017 ◽  
Vol 6 (4) ◽  
pp. P161-P164 ◽  
Author(s):  
Ruochen Han ◽  
Yasa Sampurno ◽  
Siannie Theng ◽  
Fransisca Sudargho ◽  
Yun Zhuang ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Chemical Mechanical Planarization ◽  
Stribeck Curve

scholarly journals Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

2021 ◽  
Author(s):  
Yue Li ◽  
chenwei wang ◽  
Jianwei Zhou ◽  
Yuanshen Cheng ◽  
晨 续 ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Colloidal Silica ◽  
Semiconductor Device ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Image Sensor ◽  
Wafer Surface ◽  
Silicon Dioxide Film ◽  
Dioxide Film

Abstract Chemical mechanical planarization (CMP) is a critical process for smoothing and polishing the surfaces of various material layers in semiconductor device fabrication. The applications of silicon dioxide films are shallow trench isolation, an inter-layer dielectric, and emerging technologies such as CMOS Image Sensor. In this study, the effect of various chemical additives on the removal rate of silicon dioxide film using colloidal silica abrasive during CMP was investigated. The polishing results show that the removal rate of silicon dioxide film first increased and then decreased with an increasing concentration of K+, pH, and abrasive size. The removal rate of silicon dioxide film increased linearly as the abrasive concentration increased. The influence mechanisms of various additives on the removal rate of silicon dioxide film were investigated by constructing simple models and scanning electron microscopy. Further, the stable performance of the slurry was achieved due to the COO- chains generated by poly(acrylamide) hydrolysis weaken the attraction between abrasives. High-quality wafer surfaces with low surface roughness were also thus achieved. The desirable and simple ingredient slurry investigated in this study can effectively enhance the planarization performance, for example, material removal rates and wafer surface roughness.

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