Application of the Stribeck+ Curve in Silicon Dioxide Chemical Mechanical Planarization

2017 ◽  
Vol 6 (4) ◽  
pp. P161-P164 ◽  
Author(s):  
Ruochen Han ◽  
Yasa Sampurno ◽  
Siannie Theng ◽  
Fransisca Sudargho ◽  
Yun Zhuang ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Chemical Mechanical Planarization ◽  
Stribeck Curve

scholarly journals Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

2021 ◽  
Author(s):  
Yue Li ◽  
chenwei wang ◽  
Jianwei Zhou ◽  
Yuanshen Cheng ◽  
晨 续 ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Colloidal Silica ◽  
Semiconductor Device ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Image Sensor ◽  
Wafer Surface ◽  
Silicon Dioxide Film ◽  
Dioxide Film

Abstract Chemical mechanical planarization (CMP) is a critical process for smoothing and polishing the surfaces of various material layers in semiconductor device fabrication. The applications of silicon dioxide films are shallow trench isolation, an inter-layer dielectric, and emerging technologies such as CMOS Image Sensor. In this study, the effect of various chemical additives on the removal rate of silicon dioxide film using colloidal silica abrasive during CMP was investigated. The polishing results show that the removal rate of silicon dioxide film first increased and then decreased with an increasing concentration of K+, pH, and abrasive size. The removal rate of silicon dioxide film increased linearly as the abrasive concentration increased. The influence mechanisms of various additives on the removal rate of silicon dioxide film were investigated by constructing simple models and scanning electron microscopy. Further, the stable performance of the slurry was achieved due to the COO- chains generated by poly(acrylamide) hydrolysis weaken the attraction between abrasives. High-quality wafer surfaces with low surface roughness were also thus achieved. The desirable and simple ingredient slurry investigated in this study can effectively enhance the planarization performance, for example, material removal rates and wafer surface roughness.

Study on CMP Slurry and Technique of Silicon Dioxide Dielectric for ULSI

2008 ◽  
Vol 373-374 ◽  
pp. 798-801 ◽  
Author(s):  
Bai Mei Tan ◽  
J.Y. Yuan ◽  
X.H. Niu ◽  
H.L. Shi ◽  
Yu Ling Liu ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Dielectric Material ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Silica Sol ◽  
Chemical Effect ◽  
Slurry Flow ◽  
Complexation Agent ◽  
Surface Performance

SiO2 is a kind of widely used dielectric material in ULSI and its chemical mechanical planarization (CMP) is one of the most difficult processes. In this paper, the CMP mechanism and the effect of abrasive on SiO2 dielectric were analyzed; the different factors of affecting the CMP were analyzed. A kind of organic alkali was chosen to act as the pH regulator and complexation agent to enhance the chemical effect. The silica sol was selected as abrasive to realize no contamination, low viscidity, proper hardness and easy to clean. The effect of different concentration of abrasive on the removal rate and surface performance were studied. Further more the influence of polishing slurry flow and surfactant on removal rate were analyzed. The final planarization was realized.

Detection of Surface Response to Chemical/Mechanical Planarization of Silica Films

1992 ◽  
Vol 260 ◽  
Author(s):  
Jeffrey A. Trogolo ◽  
Krishna Rajan
Keyword(s):  
Electron Microscopy ◽  
Silicon Dioxide ◽  
Structural Changes ◽  
Chemical Mechanical Planarization ◽  
Film Surface ◽  
Structural Effects ◽  
Silica Films ◽  
Transmission Electron ◽  
Device Processing ◽  
Planarization Process

ABSTRACTChemical/mechanical (C/M) planarization is a technique that has received attention lately due to the industry-wide trend toward multilevel device processing. In most multilevel schemes, the most commonly planarized layer is the interlevel dielectric, usually an oxide. In order to understand the response of this oxide layer to the planarization process, the authors have addressed the issues of chemical and structural effects of C/M planarization on silicon dioxide films. Transmission electron microscopy (TEM) and Fourier transformed infrared (FTIR) spectroscopy were used to examine the films and revealed that there are chemical and structural changes that occur within 200 nm of the film surface.

The impact of diamond conditioners on scratch formation during chemical mechanical planarization (CMP) of silicon dioxide

2013 ◽  
Vol 67 ◽  
pp. 272-277 ◽  
Author(s):  
Tae-Young Kwon ◽  
Manivannan Ramachandran ◽  
Byoung-Jun Cho ◽  
Ahmed A. Busnaina ◽  
Jin-Goo Park
Keyword(s):  
Silicon Dioxide ◽  
Chemical Mechanical Planarization ◽  
The Impact
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