Effect of Conditioning and Slurry Application Method on Silicon Dioxide Removal Rates Using a Ceria-Based Chemical Mechanical Planarization Slurry

2017 ◽  
Vol 6 (7) ◽  
pp. P477-P482 ◽  
Author(s):  
Ruochen Han ◽  
Yasa Sampurno ◽  
Matthew Bahr ◽  
Leonard Borucki ◽  
Ara Philipossian
Keyword(s):  
Silicon Dioxide ◽  
Chemical Mechanical Planarization ◽  
Removal Rates ◽  
Application Method

Application of the Stribeck+ Curve in Silicon Dioxide Chemical Mechanical Planarization

2017 ◽  
Vol 6 (4) ◽  
pp. P161-P164 ◽  
Author(s):  
Ruochen Han ◽  
Yasa Sampurno ◽  
Siannie Theng ◽  
Fransisca Sudargho ◽  
Yun Zhuang ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Chemical Mechanical Planarization ◽  
Stribeck Curve

scholarly journals Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

2021 ◽  
Author(s):  
Yue Li ◽  
chenwei wang ◽  
Jianwei Zhou ◽  
Yuanshen Cheng ◽  
晨 续 ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Colloidal Silica ◽  
Semiconductor Device ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Image Sensor ◽  
Wafer Surface ◽  
Silicon Dioxide Film ◽  
Dioxide Film

Abstract Chemical mechanical planarization (CMP) is a critical process for smoothing and polishing the surfaces of various material layers in semiconductor device fabrication. The applications of silicon dioxide films are shallow trench isolation, an inter-layer dielectric, and emerging technologies such as CMOS Image Sensor. In this study, the effect of various chemical additives on the removal rate of silicon dioxide film using colloidal silica abrasive during CMP was investigated. The polishing results show that the removal rate of silicon dioxide film first increased and then decreased with an increasing concentration of K+, pH, and abrasive size. The removal rate of silicon dioxide film increased linearly as the abrasive concentration increased. The influence mechanisms of various additives on the removal rate of silicon dioxide film were investigated by constructing simple models and scanning electron microscopy. Further, the stable performance of the slurry was achieved due to the COO- chains generated by poly(acrylamide) hydrolysis weaken the attraction between abrasives. High-quality wafer surfaces with low surface roughness were also thus achieved. The desirable and simple ingredient slurry investigated in this study can effectively enhance the planarization performance, for example, material removal rates and wafer surface roughness.

Study on CMP Slurry and Technique of Silicon Dioxide Dielectric for ULSI

2008 ◽  
Vol 373-374 ◽  
pp. 798-801 ◽  
Author(s):  
Bai Mei Tan ◽  
J.Y. Yuan ◽  
X.H. Niu ◽  
H.L. Shi ◽  
Yu Ling Liu ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Dielectric Material ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Silica Sol ◽  
Chemical Effect ◽  
Slurry Flow ◽  
Complexation Agent ◽  
Surface Performance

SiO2 is a kind of widely used dielectric material in ULSI and its chemical mechanical planarization (CMP) is one of the most difficult processes. In this paper, the CMP mechanism and the effect of abrasive on SiO2 dielectric were analyzed; the different factors of affecting the CMP were analyzed. A kind of organic alkali was chosen to act as the pH regulator and complexation agent to enhance the chemical effect. The silica sol was selected as abrasive to realize no contamination, low viscidity, proper hardness and easy to clean. The effect of different concentration of abrasive on the removal rate and surface performance were studied. Further more the influence of polishing slurry flow and surfactant on removal rate were analyzed. The final planarization was realized.

Evaluation of the Chemical-mechanical Planarization (CMP) Performance of Silicon Nitride and Silicon Carbide as Hard Mask Materials for Cu-based Interconnect Technology

2002 ◽  
Vol 732 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Jia Lee ◽  
Sanjit Das ◽  
John Fitzsimmons ◽  
Glenn Biery ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Chemical Mechanical Planarization ◽  
Removal Rates ◽  
Hydrogenated Silicon ◽  
Hard Mask ◽  
Multilayer Stacks ◽  
Interconnect Technology

AbstractHydrogenated silicon nitride, hydrogenated silicon carbide, and their intermediates were chemo-mechanically polished. Results showed that, within the material set examined, harder materials also have higher CMP removal rates. In addition, CMP rates for multilayer stacks did not follow those for single layers. Polish mechanisms were proposed to explain these phenomena.

The pH Effect On Chemical Mechanical Planarization Of Copper

2003 ◽  
Vol 767 ◽  
Author(s):  
Tianbao Du ◽  
Vimal Desai
Keyword(s):  
Photoelectron Spectroscopy ◽  
Removal Rate ◽  
Ph Effect ◽  
Chemical Mechanical Planarization ◽  
Electrochemical Techniques ◽  
Surface Layers ◽  
Removal Rates ◽  
Ph Values ◽  
Alkaline Conditions ◽  
Static Conditions

AbstractThis study explores the effect of pH on the chemical mechanical polishing (CMP) characteristics of copper in H2O2 and KIO3 based slurries under various dynamic and static conditions. High purity copper disc was used to study the dissolution and oxidation kinetics at various pH (2 to 10) with 5% H2O2 or 0.1M KIO3. Electrochemical techniques were used to investigate the dissolution/passivation behavior of Cu. The affected surface layers of the statically etched Cu-disc were investigated using X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). In 5% H2O2, the Cu removal rate decreases with an increase in pH and reaches minimum at pH 6, and then increases under alkaline conditions. XPS results indicate that the surface oxide formed at various pH values was responsible for this CMP trend. However, with 0.1M KIO3, the CMP removal rates were found to be lower at pH 2. The maximum was observed at pH 4, then the removal rate decreased with the increase of pH. The lower value of removal rate at pH2 was due to the fast interaction between Cu and KIO3 and the precipitation of CuI on the pad, which makes the pad glassy, resulting in lowered removal rates. This was confirmed by XPS measurements. The decreased CMP removal rates when the pH is higher than 4 might be due to the weaker oxidation power of KIO3 with the increase of pH.

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