(Invited) Performance Analysis of a Novel Slurry Injection System for Oxide Chemical Mechanical Planarization

2013 ◽  
Vol 52 (1) ◽  
pp. 591-596 ◽  
Author(s):  
L. Borucki ◽  
Y. Zhuang ◽  
Y. Sampurno ◽  
A. Philipossian ◽  
S. Kreutzer-Schneeweiss
Keyword(s):  
Performance Analysis ◽  
Chemical Mechanical Planarization ◽  
Injection System ◽  
Slurry Injection

Analysis of A Novel Slurry Injection System in Chemical Mechanical Planarization

2011 ◽  
Vol 50 (5S1) ◽  
pp. 05EC01 ◽  
Author(s):  
Anand Meled ◽  
Yun Zhuang ◽  
Yasa Adi Sampurno ◽  
Siannie Theng ◽  
Yubo Jiao ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Injection System ◽  
Slurry Injection

Application of a Slurry Injection System to Cobalt “Buff Step” Chemical Mechanical Planarization

2018 ◽  
Vol 7 (4) ◽  
pp. P170-P174 ◽  
Author(s):  
Calliandra Stuffle ◽  
Ruochen Han ◽  
Yasa Sampurno ◽  
Siannie Theng ◽  
Wei-Tsu Tseng ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Injection System ◽  
Slurry Injection

Analysis of A Novel Slurry Injection System in Chemical Mechanical Planarization

2011 ◽  
Vol 50 (5) ◽  
pp. 05EC01 ◽  
Author(s):  
Anand Meled ◽  
Yun Zhuang ◽  
Yasa Adi Sampurno ◽  
Siannie Theng ◽  
Yubo Jiao ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Injection System ◽  
Slurry Injection

scholarly journals Slurry Injection Schemes on the Extent of Slurry Mixing and Availability during Chemical Mechanical Planarization

Micromachines ◽  
2017 ◽  
Vol 8 (6) ◽  
pp. 170 ◽  
Author(s):  
Matthew Bahr ◽  
Yasa Sampurno ◽  
Ruochen Han ◽  
Ara Philipossian
Keyword(s):  
Chemical Mechanical Planarization ◽  
Slurry Injection

Performance Analysis of Ship Fire Suppression Injection System according to Shape Variables

2021 ◽  
Vol 25 (2) ◽  
pp. 40-47
Author(s):  
Seung-Jun Oh ◽  
Kyung-Sook Jeon ◽  
Jeong-Hwan Yoon ◽  
Jeong-Ju Choi
Keyword(s):  
Performance Analysis ◽  
Fire Suppression ◽  
Injection System

Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP

2014 ◽  
Vol 219 ◽  
pp. 143-147 ◽  
Author(s):  
Ara Philipossian ◽  
Len Borucki ◽  
Yasa Sampurno ◽  
Yun Zhuang
Keyword(s):  
Removal Rate ◽  
Pressure Control ◽  
Injection System ◽  
Residual Water ◽  
Reaction Products ◽  
Wafer Level ◽  
Slurry Flows ◽  
Retaining Ring ◽  
Slurry Injection

In commercial CMP tools, slurry is applied near the pad center. As the pad rotates, more than 95% of the fresh slurry flows directly off the surface due to bow wave formation and inertial forces without ever entering the pad-wafer interface, resulting in low slurry utilization [1]. Furthermore, some slurry that manages to go under the wafer stays on the pad, mixes with fresh slurry and re-enters the pad-wafer interface. This used slurry contains reaction products, foam and pad debris (due to pad conditioning) that cause wafer-level defects [2]. Such defect-causing by-products keep recirculating on the pad during polishing and accumulate near the retaining ring over time. Also, since large amounts of DI water are used between wafer polishes to rinse off the debris and reaction products, appreciable amounts of water may stay on the pad and inside the grooves. When fresh slurry is introduced to polish the next wafer, it mixes with the residual water and is diluted, resulting in lower material removal. As such, the current slurry application method does not provide efficient slurry utilization and leaves significant room for improving defect levels. Moreover, the constant sweeping of the conditioner arm during in-situ conditioning results in uneven slurry distribution and introduces additional challenges when it comes to carrier multi-zone pressure control for reduced within-wafer removal rate non-uniformity.

Development and Application of an Abrasive-Free Polishing Solution for Copper

MRS Bulletin ◽  
2002 ◽  
Vol 27 (10) ◽  
pp. 772-775 ◽  
Author(s):  
Masanobu Hanazono ◽  
Jin Amanokura ◽  
Yasuo Kamigata
Keyword(s):  
Performance Analysis ◽  
Barrier Layer ◽  
Reaction Layer ◽  
Chemical Mechanical Planarization ◽  
Chemical Component ◽  
Electrochemical Methods ◽  
Copper Films ◽  
Cu Cmp ◽  
Metal Barrier

AbstractAn abrasive-free polishing (AFP) solution for chemical–mechanical planarization (CMP) of copper films on semiconductor wafers has been developed to overcome such disadvantages of conventional CMP as dishing, erosion, Cu and oxide loss, and microscratching. Electrochemical methods are an effective way of understanding the role of each chemical component in the AFP solution in order to optimize its performance. Analysis of the reaction layer of Cu elucidates the reasons for the excellent results that have been obtained. By applying the AFP solution for Cu CMP in combination with a slurry for CMP of the metal barrier layer, seven-level multilayer Cu interconnections can be successfully fabricated.

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