Investigation of TiAlC by Atomic Layer Deposition as N Type Work Function Metal for FinFET

2015 ◽  
Vol 4 (12) ◽  
pp. P441-P444 ◽  
Author(s):  
Jinjuan Xiang ◽  
Tingting Li ◽  
Yanbo Zhang ◽  
Xiaolei Wang ◽  
Jianfeng Gao ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Work Function ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of HfxAlyCz as a work function material in metal gate MOS devices

2014 ◽  
Vol 32 (1) ◽  
pp. 01A118 ◽  
Author(s):  
Albert Lee ◽  
Nobi Fuchigami ◽  
Divya Pisharoty ◽  
Zhendong Hong ◽  
Ed Haywood ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Work Function ◽  
Atomic Layer ◽  
Metal Gate ◽  
Mos Devices ◽  
Layer Deposition

The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition

2016 ◽  
Vol 63 (4) ◽  
pp. 1423-1427 ◽  
Author(s):  
Jungmin Moon ◽  
Hyun Jun Ahn ◽  
Yujin Seo ◽  
Tae In Lee ◽  
Choong-Ki Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Carbide ◽  
Work Function ◽  
Atomic Layer ◽  
Layer Deposition

The annealing effect on work function variation of WN x C y films deposited by remote plasma atomic layer deposition

2017 ◽  
Vol 214 (7) ◽  
pp. 1700010
Author(s):  
Hyunjung Kim ◽  
Woochool Jang ◽  
Changhee Shin ◽  
Kunyoung Lee ◽  
Heewoo Lim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Work Function ◽  
Atomic Layer ◽  
Annealing Effect ◽  
Remote Plasma ◽  
Layer Deposition

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition
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