Atomic layer deposition of Ru onto organic monolayers: Shifting metal effective work function using monolayer structure

2012 ◽  
Vol 30 (1) ◽  
pp. 01A162 ◽  
Author(s):  
Kie Jin Park ◽  
Gregory N. Parsons
Keyword(s):  
Atomic Layer Deposition ◽  
Work Function ◽  
Atomic Layer ◽  
Organic Monolayers ◽  
Effective Work ◽  
Effective Work Function ◽  
Layer Deposition

Controlling Area-Selective Atomic Layer Deposition of HfO2 Dielectric by Self-assembled Monolayers

2004 ◽  
Vol 811 ◽  
Author(s):  
Rong Chen ◽  
Hyoungsub Kim ◽  
Paul C. McIntyre ◽  
Stacey F. Bent
Keyword(s):  
Atomic Layer Deposition ◽  
Chain Length ◽  
Steric Effect ◽  
Atomic Layer ◽  
High Reactivity ◽  
Self Assembled Monolayers ◽  
Organic Monolayers ◽  
Layer Deposition ◽  
Assembled Monolayers ◽  
Self Assembled

ABSTRACTA series of self-assembled molecules have been investigated as deactivating agents for the HfO2 atomic layer deposition (ALD). Three important factors of self-assembled monolayers (SAMs) deactivating efficiency towards ALD--chain length, reactivity and steric effect--have been investigated and discussed as well as the initial blocking mechanism of this process. This investigation shows that in order to achieve satisfactory deactivation, it is crucial to choose high reactivity, low steric effect molecules with certain chain length to form condensed, high hydrophobic organic monolayers.

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors

2016 ◽  
Vol 6 (1) ◽  
pp. P38-P41 ◽  
Author(s):  
Jinjuan Xiang ◽  
Xiaolei Wang ◽  
Tingting Li ◽  
Jianfeng Gao ◽  
Kai Han ◽  
...  
Keyword(s):  
Work Function ◽  
Atomic Layer ◽  
Effective Work ◽  
Effective Work Function

Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films

2008 ◽  
Vol 92 (20) ◽  
pp. 202902 ◽  
Author(s):  
Tae Joo Park ◽  
Jeong Hwan Kim ◽  
Jae Hyuck Jang ◽  
Kwang Duk Na ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Work Function ◽  
Atomic Layer ◽  
Interfacial Reactions ◽  
Effective Work ◽  
Effective Work Function

Atomic layer deposition of HfxAlyCz as a work function material in metal gate MOS devices

2014 ◽  
Vol 32 (1) ◽  
pp. 01A118 ◽  
Author(s):  
Albert Lee ◽  
Nobi Fuchigami ◽  
Divya Pisharoty ◽  
Zhendong Hong ◽  
Ed Haywood ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Work Function ◽  
Atomic Layer ◽  
Metal Gate ◽  
Mos Devices ◽  
Layer Deposition

The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition

2016 ◽  
Vol 63 (4) ◽  
pp. 1423-1427 ◽  
Author(s):  
Jungmin Moon ◽  
Hyun Jun Ahn ◽  
Yujin Seo ◽  
Tae In Lee ◽  
Choong-Ki Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Carbide ◽  
Work Function ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

2020 ◽  
Vol 10 (7) ◽  
pp. 2440 ◽  
Author(s):  
Filippo Giannazzo ◽  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
Rositsa Yakimova
Keyword(s):  
Atomic Layer Deposition ◽  
Critical Role ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Organic Monolayers ◽  
Layer Deposition ◽  
High K ◽  
Deposited Metal ◽  
High K Materials ◽  
The Impact

Due to its excellent physical properties and availability directly on a semiconductor substrate, epitaxial graphene (EG) grown on the (0001) face of hexagonal silicon carbide is a material of choice for advanced applications in electronics, metrology and sensing. The deposition of ultrathin high-k insulators on its surface is a key requirement for the fabrication of EG-based devices, and, in this context, atomic layer deposition (ALD) is the most suitable candidate to achieve uniform coating with nanometric thickness control. This paper presents an overview of the research on ALD of high-k insulators on EG, with a special emphasis on the role played by the peculiar electrical/structural properties of the EG/SiC (0001) interface in the nucleation step of the ALD process. The direct deposition of Al2O3 thin films on the pristine EG surface will be first discussed, demonstrating the critical role of monolayer EG uniformity to achieve a homogeneous Al2O3 coverage. Furthermore, the ALD of several high-k materials on EG coated with different seeding layers (oxidized metal films, directly deposited metal-oxides and self-assembled organic monolayers) or subjected to various prefunctionalization treatments (e.g., ozone or fluorine treatments) will be presented. The impact of the pretreatments and of thermal ALD growth on the defectivity and electrical properties (doping and carrier mobility) of the underlying EG will be discussed.

The annealing effect on work function variation of WN x C y films deposited by remote plasma atomic layer deposition

2017 ◽  
Vol 214 (7) ◽  
pp. 1700010
Author(s):  
Hyunjung Kim ◽  
Woochool Jang ◽  
Changhee Shin ◽  
Kunyoung Lee ◽  
Heewoo Lim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Work Function ◽  
Atomic Layer ◽  
Annealing Effect ◽  
Remote Plasma ◽  
Layer Deposition
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