Tunable Work-Function Engineering of TiC–TiN Compound by Atomic Layer Deposition for Metal Gate Applications

2010 ◽  
Vol 157 (10) ◽  
pp. H930 ◽  
Author(s):  
Sanghun Jeon ◽  
Sungho Park
Keyword(s):  
Atomic Layer Deposition ◽  
Work Function ◽  
Atomic Layer ◽  
Metal Gate ◽  
Layer Deposition

Atomic layer deposition of HfxAlyCz as a work function material in metal gate MOS devices

2014 ◽  
Vol 32 (1) ◽  
pp. 01A118 ◽  
Author(s):  
Albert Lee ◽  
Nobi Fuchigami ◽  
Divya Pisharoty ◽  
Zhendong Hong ◽  
Ed Haywood ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Work Function ◽  
Atomic Layer ◽  
Metal Gate ◽  
Mos Devices ◽  
Layer Deposition

scholarly journals Atomic Layer Deposition (ALD) of Metal Gates for CMOS

2019 ◽  
Vol 9 (11) ◽  
pp. 2388 ◽  
Author(s):  
Chao Zhao ◽  
Jinjuan Xiang
Keyword(s):  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Material Selection ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Gate Stack ◽  
Short Channel ◽  
Metal Gates ◽  
Layer Deposition

The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of channel in last 20 years. To solve the first issue, the high-κ dielectric and metal gate technology had been induced to replace the conventional gate stack of silicon dioxide layer and poly-silicon. To suppress the short channel effects, device architecture had changed from planar bulk Si device to fully depleted silicon on insulator (FDSOI) and FinFETs, and will transit to gate all-around FETs (GAA-FETs). Different from the planar devices, the FinFETs and GAA-FETs have a 3D channel. The conventional high-κ/metal gate process using sputtering faces conformality difficulty, and all atomic layer deposition (ALD) of gate stack become necessary. This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si. The ALD of n-type metal gate will be detailed systematically, based mainly on the authors’ works in last five years, and the all ALD gate stacks will be proposed for the future generations based on the learning.

Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor

2015 ◽  
Vol 15 (1) ◽  
pp. 382-385
Author(s):  
Jun Hee Cho ◽  
Sang-Ick Lee ◽  
Jong Hyun Kim ◽  
Sang Jun Yim ◽  
Hyung Soo Shin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Gate ◽  
Layer Deposition ◽  
High K

Engineering Band-Edge High-κ/Metal Gate n-MOSFETs with Cap Layers Containing Group IIA and IIIB Elements by Atomic Layer Deposition

2019 ◽  
Vol 19 (1) ◽  
pp. 253-261 ◽  
Author(s):  
Hemanth Jagannathan ◽  
Lisa F. Edge ◽  
Paul Jamison ◽  
Ryosuke Iijima ◽  
Vijay Narayanan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Band Edge ◽  
Metal Gate ◽  
Layer Deposition

Low-Temperature Silicon Oxide Offset Spacer Using Plasma-Enhanced Atomic Layer Deposition for High-k/Metal Gate Transistor

2010 ◽  
Vol 49 (4) ◽  
pp. 04DB11 ◽  
Author(s):  
Tatsunori Murata ◽  
Yoshihiro Miyagawa ◽  
Yukio Nishida ◽  
Yoshiki Yamamoto ◽  
Tomohiro Yamashita ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Metal Gate ◽  
Layer Deposition ◽  
High K

The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition

2016 ◽  
Vol 63 (4) ◽  
pp. 1423-1427 ◽  
Author(s):  
Jungmin Moon ◽  
Hyun Jun Ahn ◽  
Yujin Seo ◽  
Tae In Lee ◽  
Choong-Ki Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Carbide ◽  
Work Function ◽  
Atomic Layer ◽  
Layer Deposition
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