Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films

2018 ◽  
Vol 10 (46) ◽  
pp. 40286-40293 ◽  
Author(s):  
Hanearl Jung ◽  
Il-Kwon Oh ◽  
Chang Mo Yoon ◽  
Bo-Eun Park ◽  
Sanghun Lee ◽  
...  
2018 ◽  
Vol 36 (1) ◽  
pp. 01B103 ◽  
Author(s):  
Shashank Balasubramanyam ◽  
Akhil Sharma ◽  
Vincent Vandalon ◽  
Harm C. M. Knoops ◽  
Wilhelmus M. M. (Erwin) Kessels ◽  
...  

2013 ◽  
Vol 2 (12) ◽  
pp. P114-P116 ◽  
Author(s):  
J.-S. Choi ◽  
B. S. Yang ◽  
S.-J. Won ◽  
J. R. Kim ◽  
S. Suh ◽  
...  

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.


2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 217-223 ◽  
Author(s):  
Timothee Blanquart ◽  
Mikko Kaipio ◽  
Jaakko Niinistö ◽  
Marco Gavagnin ◽  
Valentino Longo ◽  
...  

2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.


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