On the Impact of Strained PECVD Nitride Layers on Oxide Precipitate Nucleation in Silicon

2019 ◽  
Vol 8 (9) ◽  
pp. N125-N133 ◽  
Author(s):  
G. Kissinger ◽  
D. Kot ◽  
I. Costina ◽  
M. Lisker
Keyword(s):  
Nitride Layers ◽  
Precipitate Nucleation ◽  
The Impact ◽  
Oxide Precipitate

The Influence of Mg and Ag on the Precipitation Kinetics and the Formation of the T1 Phase in Al-Cu-Li Alloys

2014 ◽  
Vol 794-796 ◽  
pp. 945-950 ◽  
Author(s):  
Eva Gumbmann ◽  
Frederic de Geuser ◽  
Williams Lefebvre ◽  
Christophe Sigli ◽  
Alexis Deschamps
Keyword(s):  
Cold Deformation ◽  
Precipitation Kinetics ◽  
Nucleation Kinetics ◽  
Aerospace Applications ◽  
X Ray Scattering ◽  
Common Content ◽  
Precipitate Nucleation ◽  
The Impact ◽  
Kinetics Of

Al-Cu-Li alloys are extensively used for aerospace applications. The main hardening phase is the T1phase that precipitates as thin platelets on {111}Alplanes. To facilitate its nucleation, different minor alloying elements are added and dislocations are introduced by cold deformation before the ageing treatment. The impact of these additions in combination with the presence of dislocations on precipitate nucleation and growth needs a deeper understanding. In this work, we investigated the precipitation kinetics of the T1phase in alloys containing a common content of Cu and Li and different contents of minor solutes (Mg, Ag) where these elements are present either together or independently. A general overview on the precipitation kinetics was achieved by in-situ small-angle X-ray scattering and hardness measurements. The evaluation of precipitation kinetics reveals that magnesium plays an important role during precipitation by enhancing nucleation kinetics. Additionally, a smaller yet measureable effect of Ag, both in the presence and absence of Mg has been evidenced.

On the Impact of Grown-in Silicon Oxide Precipitate Nuclei on Silicon Gate Oxide Integrity

1996 ◽  
pp. 493-500 ◽  
Author(s):  
J. Vanhellemont ◽  
G. Kissinger ◽  
K. Kenis ◽  
M. Depas ◽  
D. Gräf ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
The Impact ◽  
Oxide Precipitate ◽  
Gate Oxide Integrity

A contribution to oxide precipitate nucleation in nitrogen doped silicon

2006 ◽  
Vol 203 (4) ◽  
pp. 677-684 ◽  
Author(s):  
G. Kissinger ◽  
U. Lambert ◽  
M. Weber ◽  
F. Bittersberger ◽  
T. Müller ◽  
...  
Keyword(s):  
Nitrogen Doped ◽  
Doped Silicon ◽  
Precipitate Nucleation ◽  
Oxide Precipitate

Characterization of Thin Titanium and Titanium Nitride Layers Using Sims

1998 ◽  
Vol 514 ◽  
Author(s):  
Andrei V. Li-Fatou ◽  
Mauro R. Sardela ◽  
Chunsheng Tian
Keyword(s):  
Titanium Nitride ◽  
Large Fraction ◽  
Film Surface ◽  
Depth Resolution ◽  
Angle Of Incidence ◽  
Tin Films ◽  
Analytical Technique ◽  
Nitride Layers ◽  
The Impact

ABSTRACTTitanium (Ti) and titanium nitride (TiN) films are widely used as barrier stack to prevent junction spiking. It is also an important material for an anti-reflection coating (ARC) on aluminum (Al) films to facilitate lithography processes during multilevel metallization for the manufacture of integrated circuits on silicon-based (Si) semiconductor devices. Secondary Ion Mass Spectrometry (SIMS) is proven to be very powerful analytical technique for the semiconductor materials. However, quantitative analysis of very thin structures using SIMS constitutes an ultimate challenge since a large fraction of the profile is located in the transient region where a stable concentration of primary beam species has not been established.This paper reports a SIMS technique for advanced characterization of very thin titanium and titanium nitride layers. Improvements in depth resolution were achieved by reducing the angle of incidence and the impact energy maintaining enhanced ionization yield associated with oxygen bombardment. Significant improvements in characterization of the film surface were developed by using oxygen flooding technique. Optimized oxygen pressure was used to achieve a stable ion yield due to the complete surface oxidation of titanium and titanium nitride layers during the analysis. The method was employed in the SIMS characterization of multiple Ti/TiN films deposited on silicon substrate. The example presents dramatic enhancement in depth resolution due to minimized matrix related ion yield variations at the interfaces.

Advances in the Understanding of Oxide Precipitate Nucleation in Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 995-1000 ◽  
Author(s):  
Gudrun Kissinger ◽  
Dawid Kot ◽  
Vladimir Akhmetov ◽  
Andreas Sattler ◽  
Timo Mueller ◽  
...  
Keyword(s):  
Precipitate Nucleation ◽  
Oxide Precipitate

Two Paths of Oxide Precipitate Nucleation in Silicon

2007 ◽  
pp. 293-302
Author(s):  
G. Kissinger ◽  
J. Dabrowski ◽  
Andreas Sattler ◽  
Timo Müller ◽  
Wilfried von Ammon
Keyword(s):  
Precipitate Nucleation ◽  
Oxide Precipitate

Synthesis of Alumina and Aluminum Nitride Layers on a Graphitic Substrate via a Sol-Gel Route

2010 ◽  
Vol 63 ◽  
pp. 24-29
Author(s):  
Florian Fontaine ◽  
René Pailler ◽  
Alain Guette
Keyword(s):  
Heat Treatment ◽  
Aluminum Nitride ◽  
Sol Gel ◽  
Nitride Layer ◽  
Carbon Substrate ◽  
Alumina Layer ◽  
Turbostratic Carbon ◽  
Treatment Conditions ◽  
Nitride Layers ◽  
The Impact

In this study, our objective is to deposit an alumina or an aluminum nitride layer on a turbostratic carbon substrate. The coatings are synthesized via a sol-gel route followed by a heat treatment in order to obtain -alumina or hexagonal aluminum nitride by carbothermal nitridation of alumina. The synthesis of such layers on carbon substrates is not reported in literature. Several slurries were elaborated using various solvents and catalysts, and aluminum-tri-sec-butoxide as an aluminum precursor. The coating is obtained by dropping the substrate in the sol. After drying and pyrolysis, the amorphous alumina layer obtained has a thickness ranging from 500 nm to 1 µm. The material is finally heat treated. Several treatment conditions were evaluated. A thermodynamic study of the Al-C-O-N system will be drawn, and the composition of the synthesized sol-gel and heat treatment parameters will be detailed. Then, the layer’s morphology and structure will be characterized thanks to Scanning Electron Microscopy and X-Ray Diffraction analyses. The impact of heat treatment parameters will be discussed and experimental results will be compared to the theoretical thermodynamic results.

Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si

2013 ◽  
Vol 210 (12) ◽  
pp. 2592-2599 ◽  
Author(s):  
Xinpeng Zhang ◽  
Maosen Fu ◽  
Xiangyang Ma ◽  
Deren Yang ◽  
Jan Vanhellemont
Keyword(s):  
Low Resistivity ◽  
Precipitate Nucleation ◽  
Oxide Precipitate

scholarly journals Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Sensors ◽  
2019 ◽  
Vol 19 (15) ◽  
pp. 3414
Author(s):  
Tillmann ◽  
Kokalj ◽  
Stangier ◽  
Schöppner ◽  
Malatyali
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Reaction Time ◽  
Seebeck Coefficient ◽  
Physical Structure ◽  
Boron Carbonitride ◽  
Deposition Parameters ◽  
Thin Film Thermocouples ◽  
Nitride Layers ◽  
The Impact

Thin film thermocouples are widely used for local temperature determinations of surfaces. However, depending on the environment in which they are used, thin film thermocouples need to be covered by a wear or oxidation resistant top layer. With regard to the utilization in wide-slit nozzles for plastic extrusion, Ni/Ni-20Cr thin film thermocouples were manufactured using direct-current (DC) magnetron sputtering combined with Aluminiumnitride (AlN) and Boron-Carbonitride (BCN) thin films. On the one hand, the deposition parameters of the nitride layers were varied to affect the chemical composition and morphology of the AlN and BCN thin films. On the other hand, the position of the nitride layers (below the thermocouple, above the thermocouple, around the thermocouple) was changed. Both factors were investigated concerning the influence on the Seebeck coefficient and the reaction behaviour of the thermocouples. Therefore, the impact of the nitride thin films on the morphology, physical structure, crystallite size, electrical resistance and hardness of the Ni and Ni-20Cr thin films is analysed. The investigations reveal that the Seebeck coefficient is not affected by the different architectures of the thermocouples. Nevertheless, the reaction time of the thermocouples can be significantly improved by adding a thermal conductive top coat over the thin films, whereas the top coat should have a coarse structure and low nitrogen content.

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