Advances in the Understanding of Oxide Precipitate Nucleation in Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 995-1000 ◽  
Author(s):  
Gudrun Kissinger ◽  
Dawid Kot ◽  
Vladimir Akhmetov ◽  
Andreas Sattler ◽  
Timo Mueller ◽  
...  
Keyword(s):  
Precipitate Nucleation ◽  
Oxide Precipitate

A contribution to oxide precipitate nucleation in nitrogen doped silicon

2006 ◽  
Vol 203 (4) ◽  
pp. 677-684 ◽  
Author(s):  
G. Kissinger ◽  
U. Lambert ◽  
M. Weber ◽  
F. Bittersberger ◽  
T. Müller ◽  
...  
Keyword(s):  
Nitrogen Doped ◽  
Doped Silicon ◽  
Precipitate Nucleation ◽  
Oxide Precipitate

Two Paths of Oxide Precipitate Nucleation in Silicon

2007 ◽  
pp. 293-302
Author(s):  
G. Kissinger ◽  
J. Dabrowski ◽  
Andreas Sattler ◽  
Timo Müller ◽  
Wilfried von Ammon
Keyword(s):  
Precipitate Nucleation ◽  
Oxide Precipitate

Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si

2013 ◽  
Vol 210 (12) ◽  
pp. 2592-2599 ◽  
Author(s):  
Xinpeng Zhang ◽  
Maosen Fu ◽  
Xiangyang Ma ◽  
Deren Yang ◽  
Jan Vanhellemont
Keyword(s):  
Low Resistivity ◽  
Precipitate Nucleation ◽  
Oxide Precipitate

Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si

1987 ◽  
Vol 104 ◽  
Author(s):  
S. Hahn ◽  
M. Arst ◽  
K. N. Ritz ◽  
S. Shatas ◽  
H. J. Stein ◽  
...  
Keyword(s):  
Carbon Content ◽  
Carbon Concentration ◽  
High Carbon ◽  
High Carbon Content ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate ◽  
High Carbon Concentration ◽  
Precipitation Characteristics ◽  
C Complex ◽  
Oxide Precipitate

ABSTRACTEffects of high carbon concentration upon oxygen precipitate formation in Cz silicon have been investigated by combining various furnace and rapid thermal annneals. Even though oxide precipitate density increases with increasing carbon levels, Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs ∼ 4ppma) exhibit Pendellosung fringes, indicating a strain free bulk state. Our optical microscopic data have also shown very few defect etch features inside the bulk. A model based upon a direct coupling of both SiO2 and Si-C complex formation reactions is used to explain rather unique oxygen precipitation characteristics in the high carbon content Cz Si materials.

Defects and AlSb Precipitate Nucleation in Laser Irradiated Aluminum

1981 ◽  
Vol 4 ◽  
Author(s):  
P. S. Peercy ◽  
D. M. Follstaedt ◽  
S. T. Picraux ◽  
W. R. Wampler
Keyword(s):  
Room Temperature ◽  
Laser Energy ◽  
Ion Beam ◽  
Threshold Energy ◽  
Single Pulse ◽  
Temperature Profiles ◽  
Beam Analysis ◽  
Slip Deformation ◽  
Precipitate Nucleation ◽  
Substrate Temperatures

ABSTRACTLattice defects and precipitates induced in unimplanted and Sb-implanted <110> single crystal Al by single pulse irradiation with a Q-switched ruby laser were studied using ion beam analysis and electron microscopy. The absorbed laser energy during irradiation is directly measured in these studies to allow precise numerical modeling of the melt times and temperature profiles. For unimplanted Al, slip deformation gives rise to increased channeled yields throughout the analyzed depth and occurs for energies well below the melt threshold energy of 3.5 J/cm2. Slip deformation is also observed for irradiation energies above the melt threshold energy, and melting is accompanied by a discontinuous increase in the minimum channeling yield, X min- Implanted Sb (to ∼2 at.% peak concentrations) is found to impede epitaxial regrowth and result in polycrystalline Al formation for laser energies such that the melt front is believed not to penetrate through the Sb-containing region. For deeper melt depths, a metastable alloy is formed with up to 35% of the Sb located in substitutional sites. AlSb precipitate formation in the melt was not observed for room temperature irradiations; however, randomly oriented AlSb precipitates are observed for irradiation at substrate temperatures of 100 and 200 °C These measurements yield an estimated time for nucleation of AlSb precipitates in molten Al of 5 nsec < tnuc < 25 nsec.

scholarly journals Oxygen migration enthalpy likely limits oxide precipitate dissolution during tabula rasa

2017 ◽  
Vol 111 (13) ◽  
pp. 132102 ◽  
Author(s):  
E. E. Looney ◽  
H. S. Laine ◽  
A. Youssef ◽  
M. A. Jensen ◽  
V. LaSalvia ◽  
...  
Keyword(s):  
Precipitate Dissolution ◽  
Oxygen Migration ◽  
Oxide Precipitate ◽  
Migration Enthalpy
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