(Invited) Study on Impact of MOS Interface Passivation Processes on Band Alignment and Flat-Band Voltage of 4H-SiC Gate Stacks

2021 ◽  
Vol 104 (4) ◽  
pp. 193-199
Author(s):  
Koji Kita
Keyword(s):  
Band Alignment ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Gate Stacks ◽  
Interface Passivation

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift
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