Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks

L. Lin; J. Robertson

doi:10.1063/1.3173814

Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks

Applied Physics Letters ◽

10.1063/1.3173814 ◽

2009 ◽

Vol 95 (1) ◽

pp. 012906 ◽

Cited By ~ 34

Author(s):

L. Lin ◽

J. Robertson

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

Atomic Mechanism

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Atomic mechanism of Flat band voltage shifts by Oxide dipole Layers in High K-Metal Gate Stacks

10.7567/ssdm.2010.b-3-1 ◽

2010 ◽

Author(s):

J. Robertson ◽

L. Lin

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

Metal Gate ◽

Atomic Mechanism ◽

High K

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(Invited) Study on Impact of MOS Interface Passivation Processes on Band Alignment and Flat-Band Voltage of 4H-SiC Gate Stacks

ECS Meeting Abstracts ◽

10.1149/ma2021-0230940mtgabs ◽

2021 ◽

Vol MA2021-02 (30) ◽

pp. 940-940

Author(s):

Koji Kita

Keyword(s):

Band Alignment ◽

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

Interface Passivation

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The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044230 ◽

2011 ◽

Cited By ~ 1

Author(s):

BeomYong Kim ◽

YunHyuck Ji ◽

SeungMi Lee ◽

BongSeok Jeon ◽

KeeJeung Lee ◽

...

Keyword(s):

Ion Implantation ◽

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

Voltage Shift ◽

High K

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Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers

Microelectronic Engineering ◽

10.1016/j.mee.2009.03.012 ◽

2009 ◽

Vol 86 (7-9) ◽

pp. 1743-1746 ◽

Cited By ~ 20

Author(s):

L. Lin ◽

J. Robertson

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Atomic Mechanism

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Origin of the flat-band voltage (Vfb) roll-off phenomenon in metal/high-k gate stacks

ESSDERC 2008 - 38th European Solid-State Device Research Conference ◽

10.1109/essderc.2008.4681717 ◽

2008 ◽

Cited By ~ 1

Author(s):

G. Bersuker ◽

C. S. Park ◽

H. C. Wen ◽

K. Choi ◽

O. Sharia ◽

...

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

High K

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Nature of Interface Traps in Si/SiO2/HfO2 /TiN Gate Stacks and its Correlation with the Flat-band Voltage Roll-off

ECS Transactions ◽

10.1149/1.3206639 ◽

2019 ◽

Vol 25 (6) ◽

pp. 399-408 ◽

Cited By ~ 4

Author(s):

S. Kar

Keyword(s):

Flat Band ◽

Interface Traps ◽

Flat Band Voltage ◽

Gate Stacks

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(Invited) Study on Impact of MOS Interface Passivation Processes on Band Alignment and Flat-Band Voltage of 4H-SiC Gate Stacks

ECS Transactions ◽

10.1149/10404.0193ecst ◽

2021 ◽

Vol 104 (4) ◽

pp. 193-199

Author(s):

Koji Kita

Keyword(s):

Band Alignment ◽

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

Interface Passivation

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Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

Applied Physics Express ◽

10.35848/1882-0786/abc516 ◽

2020 ◽

Vol 13 (11) ◽

pp. 111006

Author(s):

Li-Chuan Sun ◽

Chih-Yang Lin ◽

Po-Hsun Chen ◽

Tsung-Ming Tsai ◽

Kuan-Ju Zhou ◽

...

Keyword(s):

Low Temperature ◽

Trap Density ◽

Flat Band ◽

Interface Trap Density ◽

Interface Trap ◽

Flat Band Voltage ◽

Voltage Shift

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New method of determination of the flat-band voltage in SOI MOS structures

Solid-State Electronics ◽

10.1016/0038-1101(86)90019-5 ◽

1986 ◽

Vol 29 (9) ◽

pp. 947-950 ◽

Cited By ~ 6

Author(s):

Krzysztof Iniewski ◽

Andrzej Jakubowski

Keyword(s):

New Method ◽

Flat Band ◽

Flat Band Voltage ◽

Method Of Determination ◽

Mos Structures

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Flat-band voltage of a-Si pin solar cells from spectral characteristics

10.1109/pvsc.1988.105684 ◽

1988 ◽

Cited By ~ 1

Author(s):

H. Pfleiderer ◽

W. Kusian ◽

E. Gunzel ◽

J. Grabmaier

Keyword(s):

Solar Cells ◽

Spectral Characteristics ◽

Flat Band ◽

Flat Band Voltage

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