Nature of Interface Traps in Si/SiO2/HfO2 /TiN Gate Stacks and its Correlation with the Flat-band Voltage Roll-off

2019 ◽  
Vol 25 (6) ◽  
pp. 399-408 ◽  
Author(s):  
S. Kar
Keyword(s):  
Flat Band ◽  
Interface Traps ◽  
Flat Band Voltage ◽  
Gate Stacks

Process-Dependent Charges and Traps in Dielectrics on SiC

2006 ◽  
Vol 527-529 ◽  
pp. 995-998
Author(s):  
Bharat Krishnan ◽  
Hrishikesh Das ◽  
Yaroslav Koshka ◽  
Igor Sankin ◽  
P.A. Martin ◽  
...  
Keyword(s):  
Charge Injection ◽  
Charge Trapping ◽  
Transient Behavior ◽  
Flat Band ◽  
Interface Traps ◽  
Flat Band Voltage ◽  
Applied Bias ◽  
Voltage Drift ◽  
Charge Stability ◽  
Processing Techniques

Dielectric charges and charge stability were compared in different dielectrics formed on SiC by different processing techniques. The concentration and transient behavior of the interface and trapped charges were investigated. Strong hysteresis and flat-band voltage drift under applied bias were observed in some of the samples. They are attributed to the trapping of the charge injected in the dielectrics. Differences in charge injection, charge trapping, and capture/emission of carriers by interface traps were pronounced for the investigated SiO2 and Si3N4 dielectrics.

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift
Sign in / Sign up

Export Citation Format

Share Document