2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044207 ◽

2011 ◽

Cited By ~ 3

Author(s):

Mirko Bernardoni ◽

Nicola Delmonte ◽

Giovanna Sozzi ◽

Roberto Menozzi

Keyword(s):

Thermal Model ◽

Large Signal ◽

Self Heating ◽

Gan Hemt ◽

Dynamic Description

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Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044201 ◽

2011 ◽

Cited By ~ 6

Author(s):

A. Maconi ◽

A. Arreghini ◽

C. Monzio Compagnoni ◽

G. Van den bosch ◽

A. S. Spinelli ◽

...

Keyword(s):

Retention Performance ◽

Charge Migration

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Thermally robust atomic layer deposited ZrO2 gate dielectric films upon the post-deposition annealing

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044232 ◽

2011 ◽

Author(s):

Hyung-Suk Jung ◽

Hyo Kyeom Kim ◽

Sang Young Lee ◽

Nae-in Lee ◽

Tae Joo Park ◽

...

Keyword(s):

Gate Dielectric ◽

Atomic Layer ◽

Dielectric Films ◽

Post Deposition Annealing ◽

Post Deposition

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Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased ground plane FDSOI high-k/metal gate technology

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044222 ◽

2011 ◽

Cited By ~ 1

Author(s):

C. Fenouillet-Beranger ◽

P. Perreau ◽

P. Boulenc ◽

L. Tosti ◽

S. Barnola ◽

...

Keyword(s):

Ground Plane ◽

Metal Gate ◽

High K

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Reset current reduction in phase-change memory cell using a thin interfacial oxide layer

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044226 ◽

2011 ◽

Cited By ~ 9

Author(s):

Q. Hubert ◽

C. Jahan ◽

A. Toffoli ◽

L. Perniola ◽

V. Sousa ◽

...

Keyword(s):

Phase Change ◽

Oxide Layer ◽

Phase Change Memory ◽

Memory Cell ◽

Current Reduction ◽

Change Memory

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Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044229 ◽

2011 ◽

Cited By ~ 2

Author(s):

Kazuhiko Endo ◽

Yuki Ishikawa ◽

Takashi Matsukawa ◽

Yongxum Liu ◽

Shin-ichi O'uchi ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition

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Self-aligned double-gate suspended-body single-walled carbon nanotube field-effect-transistors

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044171 ◽

2011 ◽

Author(s):

Ji Cao ◽

Adrian M. Ionescu

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon

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A device array for efficient bias-temperature instability measurements

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044214 ◽

2011 ◽

Cited By ~ 21

Author(s):

Takashi Sato ◽

Tadamichi Kozaki ◽

Takumi Uezono ◽

Hiroshi Tsutsui ◽

Hiroyuki Ochi

Keyword(s):

Temperature Instability ◽

Bias Temperature Instability

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Numerical analysis of cosmic radiation-induced failures in power diodes

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044161 ◽

2011 ◽

Cited By ~ 4

Author(s):

Christoph Weis ◽

Stefan Aschauer ◽

Gerhard Wachutka ◽

Andreas Hartl ◽

Frank Hille ◽

...

Keyword(s):

Numerical Analysis ◽

Cosmic Radiation ◽

Power Diodes ◽

Radiation Induced

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The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044230 ◽

2011 ◽

Cited By ~ 1

Author(s):

BeomYong Kim ◽

YunHyuck Ji ◽

SeungMi Lee ◽

BongSeok Jeon ◽

KeeJeung Lee ◽

...

Keyword(s):

Ion Implantation ◽

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

Voltage Shift ◽

High K

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating

Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices

Thermally robust atomic layer deposited ZrO2 gate dielectric films upon the post-deposition annealing

Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased ground plane FDSOI high-k/metal gate technology

Reset current reduction in phase-change memory cell using a thin interfacial oxide layer

Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

Self-aligned double-gate suspended-body single-walled carbon nanotube field-effect-transistors

A device array for efficient bias-temperature instability measurements

Numerical analysis of cosmic radiation-induced failures in power diodes

The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Large-signal GaN HEMT electro-thermal model with 3D dynamic description of self-heating

Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices

Thermally robust atomic layer deposited ZrO2 gate dielectric films upon the post-deposition annealing

Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased ground plane FDSOI high-k/metal gate technology

Reset current reduction in phase-change memory cell using a thin interfacial oxide layer

Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

Self-aligned double-gate suspended-body single-walled carbon nanotube field-effect-transistors

A device array for efficient bias-temperature instability measurements

Numerical analysis of cosmic radiation-induced failures in power diodes

The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
Latest Publications