Pattern Sensitivity Study for Non-Volatile Memory Data Retention Test

2019 ◽  
Vol 44 (1) ◽  
pp. 1037-1042
Author(s):  
Weihai Fan ◽  
Lisa Yu ◽  
Shaha Hu
Keyword(s):  
Retention Test ◽  
Sensitivity Study ◽  
Data Retention ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Pattern Sensitivity

Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test

2012 ◽  
Vol 78 ◽  
pp. 151-155 ◽  
Author(s):  
H. Aziza ◽  
J.M. Portal ◽  
J. Plantier ◽  
C. Reliaud ◽  
A. Regnier ◽  
...  
Keyword(s):  
Retention Test ◽  
Reliability Evaluation ◽  
Generation Rate ◽  
Defect Generation ◽  
Non Volatile Memory ◽  
Volatile Memory

scholarly journals Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

Nanomaterials ◽  
2017 ◽  
Vol 7 (11) ◽  
pp. 385
Author(s):  
Yu-Hua Liu ◽  
Chyuan-Haur Kao ◽  
Tsung-Chin Cheng ◽  
Chih-I Wu ◽  
Jer-Chyi Wang
Keyword(s):  
Gold Nanoparticle ◽  
Oxide Layer ◽  
Data Retention ◽  
Non Volatile Memory ◽  
Volatile Memory

An Analysis of OTP ROM Programmable Devices in 1.0um SOI CMOS

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000226-000231
Author(s):  
Paul W. Moody ◽  
Marshall Soares
Keyword(s):  
High Temperature ◽  
Data Retention ◽  
Non Volatile Memory ◽  
Soi Devices ◽  
Volatile Memory ◽  
Programmable Devices ◽  
Soi Cmos ◽  
Temperature Applications

Recent approaches to provide non-volatile memory for high temperature applications have been performance limited, either by data retention in SOI EEPROM devices, or by using processes not well suited to high temperature. This work examines SOI devices that may provide reliable OTP solutions. Anti-fuse and fuse approaches are analyzed to determine programmability, suitability for in-situ programming, density implications, and data retention.

Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices

Nanoscale ◽  
2019 ◽  
Vol 11 (39) ◽  
pp. 18159-18168 ◽  
Author(s):  
Saurabh Srivastava ◽  
Joseph Palathinkal Thomas ◽  
Kam Tong Leung
Keyword(s):  
Memory Device ◽  
Memory Devices ◽  
Data Retention ◽  
Pt Electrodes ◽  
Non Volatile Memory ◽  
Volatile Memory

A TiOx/TaOx heterojunction sandwiched between a pair of Pt electrodes provides an electroforming-free non-volatile memory device with a remarkably low programming voltage (+0.5 V), high endurance (104 cycles) and data retention (105 s).

Multi-bit memory cell using long-range non-anchored actuation for high temperature applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000152-000159
Author(s):  
Mehrdad Elyasi ◽  
Chengkuo Lee ◽  
Cheng-Yu Hsieh ◽  
Dim-Lee Kwong
Keyword(s):  
High Temperature ◽  
Long Range ◽  
Memory Cell ◽  
Sliding Contact ◽  
Adhesion Forces ◽  
Data Retention ◽  
Conductive Path ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Cell Data

A novel micro-electro-mechanical (MEM) based non-volatile memory (NVM) is proposed. The storage principle is based on Lorentz's transduction, utilizing long-range motion of a non-anchored element which has current carrying sliding contact with a conductive path. Position of the moving element indicates the stored data in the multi-bit cell. Data is written in the cell with displacing the moving element by Lorentz's force, is read by utilizing differential port resistances, and is held by adhesion forces. Data writing at up to 300°C, and data retention and reading for higher temperatures are reliable.

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