The kinetics of degradation of data retention of post-cycled nrom non-volatile memory products

2005 ◽  
Author(s):  
M. Janai ◽  
B. Eitan
Keyword(s):  
Data Retention ◽  
Non Volatile Memory ◽  
Kinetics Of Degradation ◽  
Volatile Memory ◽  
Kinetics Of

A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric

1998 ◽  
Vol 510 ◽  
Author(s):  
K. Vanheusden ◽  
W.L. Warren ◽  
D.M. Fleetwood ◽  
R.A.B. Devine ◽  
B.L. Draper ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Hydrogen Diffusion ◽  
Gate Dielectric ◽  
Memory Device ◽  
Flat Band ◽  
Generation Process ◽  
Alkali Ions ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Kinetics Of

AbstractEver since the introduction of the metal-oxide-silicon field-effect-transistor (MOSFET), the nature of mobile and trapped charge in the oxide layer has been studied in great detail. For example, contamination with alkali ions such as sodium, causing instability of the flat-band voltage, was a major concern in the early days of MOS fabrication. Another SiO2 impurity of particular interest is hydrogen, because of its beneficial property of passivating charge traps. In this work we show that annealing of Si/SiO2/Si structures in forming gas (Ar:H2; 95:5) above 400 °C can introduce mobile H+ ions into the SiO2 layer. These mobile protons are confined within the oxide layer, and their space-charge distribution is well controllable and easily rearrangeable by applying a gate bias, making them potentially useful for application in a reliable nonvolatile MOSFET memory device. We present speed, retention, endurance, and radiation tolerance data showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as Flash.The chemical kinetics of mobile-proton reactions in the SiO2 film are also analyzed in greater detail. Our data show that the initial buildup of mobile protons during hydrogen annealing is limited by the rate of lateral hydrogen diffusion into the buried SiO2 films. The final density of mobile protons is determined by the cooling rate which terminates the annealing process and, in the case of subsequent anneals, by the temperature of the final anneal. To explain the observations, we propose a dynamical equilibrium model. Based on these insights, the incorporation of the proton generation process into standard semiconductor process flows is discussed.

scholarly journals Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

Nanomaterials ◽  
2017 ◽  
Vol 7 (11) ◽  
pp. 385
Author(s):  
Yu-Hua Liu ◽  
Chyuan-Haur Kao ◽  
Tsung-Chin Cheng ◽  
Chih-I Wu ◽  
Jer-Chyi Wang
Keyword(s):  
Gold Nanoparticle ◽  
Oxide Layer ◽  
Data Retention ◽  
Non Volatile Memory ◽  
Volatile Memory

An Analysis of OTP ROM Programmable Devices in 1.0um SOI CMOS

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000226-000231
Author(s):  
Paul W. Moody ◽  
Marshall Soares
Keyword(s):  
High Temperature ◽  
Data Retention ◽  
Non Volatile Memory ◽  
Soi Devices ◽  
Volatile Memory ◽  
Programmable Devices ◽  
Soi Cmos ◽  
Temperature Applications

Recent approaches to provide non-volatile memory for high temperature applications have been performance limited, either by data retention in SOI EEPROM devices, or by using processes not well suited to high temperature. This work examines SOI devices that may provide reliable OTP solutions. Anti-fuse and fuse approaches are analyzed to determine programmability, suitability for in-situ programming, density implications, and data retention.

Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices

Nanoscale ◽  
2019 ◽  
Vol 11 (39) ◽  
pp. 18159-18168 ◽  
Author(s):  
Saurabh Srivastava ◽  
Joseph Palathinkal Thomas ◽  
Kam Tong Leung
Keyword(s):  
Memory Device ◽  
Memory Devices ◽  
Data Retention ◽  
Pt Electrodes ◽  
Non Volatile Memory ◽  
Volatile Memory

A TiOx/TaOx heterojunction sandwiched between a pair of Pt electrodes provides an electroforming-free non-volatile memory device with a remarkably low programming voltage (+0.5 V), high endurance (104 cycles) and data retention (105 s).

Multi-bit memory cell using long-range non-anchored actuation for high temperature applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000152-000159
Author(s):  
Mehrdad Elyasi ◽  
Chengkuo Lee ◽  
Cheng-Yu Hsieh ◽  
Dim-Lee Kwong
Keyword(s):  
High Temperature ◽  
Long Range ◽  
Memory Cell ◽  
Sliding Contact ◽  
Adhesion Forces ◽  
Data Retention ◽  
Conductive Path ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Cell Data

A novel micro-electro-mechanical (MEM) based non-volatile memory (NVM) is proposed. The storage principle is based on Lorentz's transduction, utilizing long-range motion of a non-anchored element which has current carrying sliding contact with a conductive path. Position of the moving element indicates the stored data in the multi-bit cell. Data is written in the cell with displacing the moving element by Lorentz's force, is read by utilizing differential port resistances, and is held by adhesion forces. Data writing at up to 300°C, and data retention and reading for higher temperatures are reliable.

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