scholarly journals Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

Nanomaterials ◽  
2017 ◽  
Vol 7 (11) ◽  
pp. 385
Author(s):  
Yu-Hua Liu ◽  
Chyuan-Haur Kao ◽  
Tsung-Chin Cheng ◽  
Chih-I Wu ◽  
Jer-Chyi Wang
Keyword(s):  
Gold Nanoparticle ◽  
Oxide Layer ◽  
Data Retention ◽  
Non Volatile Memory ◽  
Volatile Memory

Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory

2001 ◽  
Vol 34 (1-4) ◽  
pp. 113-120 ◽  
Author(s):  
Chang Ho Shin ◽  
Seon Yong Cha ◽  
Hee Chul Lee ◽  
Won-Jae Lee ◽  
Byoung-Gon Yu ◽  
...  
Keyword(s):  
Insulating Layer ◽  
Non Volatile Memory ◽  
Fabrication And Characterization ◽  
Volatile Memory

A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric

1998 ◽  
Vol 510 ◽  
Author(s):  
K. Vanheusden ◽  
W.L. Warren ◽  
D.M. Fleetwood ◽  
R.A.B. Devine ◽  
B.L. Draper ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Hydrogen Diffusion ◽  
Gate Dielectric ◽  
Memory Device ◽  
Flat Band ◽  
Generation Process ◽  
Alkali Ions ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Kinetics Of

AbstractEver since the introduction of the metal-oxide-silicon field-effect-transistor (MOSFET), the nature of mobile and trapped charge in the oxide layer has been studied in great detail. For example, contamination with alkali ions such as sodium, causing instability of the flat-band voltage, was a major concern in the early days of MOS fabrication. Another SiO2 impurity of particular interest is hydrogen, because of its beneficial property of passivating charge traps. In this work we show that annealing of Si/SiO2/Si structures in forming gas (Ar:H2; 95:5) above 400 °C can introduce mobile H+ ions into the SiO2 layer. These mobile protons are confined within the oxide layer, and their space-charge distribution is well controllable and easily rearrangeable by applying a gate bias, making them potentially useful for application in a reliable nonvolatile MOSFET memory device. We present speed, retention, endurance, and radiation tolerance data showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as Flash.The chemical kinetics of mobile-proton reactions in the SiO2 film are also analyzed in greater detail. Our data show that the initial buildup of mobile protons during hydrogen annealing is limited by the rate of lateral hydrogen diffusion into the buried SiO2 films. The final density of mobile protons is determined by the cooling rate which terminates the annealing process and, in the case of subsequent anneals, by the temperature of the final anneal. To explain the observations, we propose a dynamical equilibrium model. Based on these insights, the incorporation of the proton generation process into standard semiconductor process flows is discussed.

Electrical characterization of SrBi2Ta2O9 thin films for ferroelectric non-volatile memory applications

1996 ◽  
Vol 12 (1) ◽  
pp. 23-31 ◽  
Author(s):  
R. E. Jones ◽  
Peter Zurcher ◽  
B. Jiang ◽  
J. Z. Witowski ◽  
Y. T. Lii ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

scholarly journals Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory

2022 ◽  
pp. 1-9
Author(s):  
Dinesh Pamunuwa ◽  
Elliott Worsey ◽  
Jamie D. Reynolds ◽  
Derek Seward ◽  
Harold M. H. Chong ◽  
...  
Keyword(s):  
Non Volatile Memory ◽  
Volatile Memory
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