Millisecond Flash Annealing as a Flatband Voltage Shift Enabler for p-Type Metal-Oxide-Semiconductor Devices with High-k/Metal Gate

Changhwan Choi; Vijay Narayanan

doi:10.1149/1.3566073

Millisecond Flash Annealing as a Flatband Voltage Shift Enabler for p-Type Metal-Oxide-Semiconductor Devices with High-k/Metal Gate

Electrochemical and Solid-State Letters ◽

10.1149/1.3566073 ◽

2011 ◽

Vol 14 (6) ◽

pp. H241 ◽

Cited By ~ 1

Author(s):

Changhwan Choi ◽

Vijay Narayanan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Voltage Shift ◽

Flash Annealing ◽

High K ◽

Flatband Voltage ◽

P Type

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Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

Applied Physics Letters ◽

10.1063/1.2904650 ◽

2008 ◽

Vol 92 (13) ◽

pp. 132907 ◽

Cited By ~ 118

Author(s):

Kunihiko Iwamoto ◽

Yuuichi Kamimuta ◽

Arito Ogawa ◽

Yukimune Watanabe ◽

Shinji Migita ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Shift ◽

High K ◽

Flatband Voltage

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Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric

Applied Physics Letters ◽

10.1063/1.1592634 ◽

2003 ◽

Vol 83 (2) ◽

pp. 308-310 ◽

Cited By ~ 27

Author(s):

C. W. Yang ◽

Y. K. Fang ◽

C. H. Chen ◽

S. F. Chen ◽

C. Y. Lin ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Shift ◽

High K ◽

Flatband Voltage ◽

P Type

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Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

Applied Physics Letters ◽

10.1063/1.3475774 ◽

2010 ◽

Vol 97 (6) ◽

pp. 062901 ◽

Cited By ~ 19

Author(s):

Xiaolei Wang ◽

Kai Han ◽

Wenwu Wang ◽

Xueli Ma ◽

Dapeng Chen ◽

...

Keyword(s):

Metal Oxide ◽

Electric Dipole ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Comprehensive Understanding ◽

Voltage Shift ◽

High K ◽

Flatband Voltage

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Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3143627 ◽

2009 ◽

Vol 94 (20) ◽

pp. 202112 ◽

Cited By ~ 77

Author(s):

Takuji Hosoi ◽

Katsuhiro Kutsuki ◽

Gaku Okamoto ◽

Marina Saito ◽

Takayoshi Shimura ◽

...

Keyword(s):

Metal Oxide ◽

Minority Carrier ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carrier Generation ◽

Voltage Shift ◽

Flatband Voltage ◽

Thermally Grown

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Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure

Journal of Semiconductors ◽

10.1088/1674-4926/36/9/094006 ◽

2015 ◽

Vol 36 (9) ◽

pp. 094006

Author(s):

Kai Han ◽

Xiaolei Wang ◽

Wenwu Wang

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Metal Gate ◽

Gate Structure ◽

High K ◽

Flatband Voltage

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Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521471 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A905 ◽

Cited By ~ 1

Author(s):

A. Fet ◽

V. Häublein ◽

A. J. Bauer ◽

H. Ryssel ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Work Function ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Effective Work ◽

Effective Work Function ◽

High K ◽

P Type

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Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor

Journal of Applied Physics ◽

10.1063/1.3093892 ◽

2009 ◽

Vol 105 (6) ◽

pp. 064108 ◽

Cited By ~ 14

Author(s):

Wenwu Wang ◽

Koji Akiyama ◽

Wataru Mizubayashi ◽

Toshihide Nabatame ◽

Hiroyuki Ota ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Voltage Shift ◽

High K ◽

Flatband Voltage

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Further work function and interface quality improvement on Al2O3 capped high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors by incorporation of fluorine

Thin Solid Films ◽

10.1016/j.tsf.2012.02.087 ◽

2012 ◽

Vol 520 (13) ◽

pp. 4482-4485 ◽

Cited By ~ 1

Author(s):

Y.W. Chen ◽

C.M. Lai ◽

L.W. Cheng ◽

C.H. Hsu ◽

C.W. Hsu

Keyword(s):

Quality Improvement ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Interface Quality ◽

High K ◽

P Type

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Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3570655 ◽

2011 ◽

Vol 98 (12) ◽

pp. 123506 ◽

Cited By ~ 11

Author(s):

Changhwan Choi ◽

Kam-Leung Lee ◽

Vijay Narayanan

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Gate Stack ◽

Dynamic Surface ◽

High K

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Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks

Journal of Applied Physics ◽

10.1063/1.5031025 ◽

2018 ◽

Vol 124 (22) ◽

pp. 224102 ◽

Cited By ~ 2

Author(s):

S. M. Pazos ◽

F. L. Aguirre ◽

K. Tang ◽

P. McIntyre ◽

F. Palumbo

Keyword(s):

Metal Oxide ◽

Frequency Dispersion ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

High K

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