Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks

2011 ◽  
Vol 29 (1) ◽  
pp. 01A905 ◽  
Author(s):  
A. Fet ◽  
V. Häublein ◽  
A. J. Bauer ◽  
H. Ryssel ◽  
L. Frey
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
P Type

Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

2017 ◽  
Vol 72 ◽  
pp. 80-84 ◽  
Author(s):  
Shimpei Yamaguchi ◽  
Zeynel Bayindir ◽  
Xiaoli He ◽  
Suresh Uppal ◽  
Purushothaman Srinivasan ◽  
...  
Keyword(s):  
Work Function ◽  
Control Technique ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
P Type

The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks

2014 ◽  
Vol 35 (10) ◽  
pp. 106002 ◽  
Author(s):  
Xueli Ma ◽  
Hong Yang ◽  
Wenwu Wang ◽  
Huaxiang Yin ◽  
Huilong Zhu ◽  
...  
Keyword(s):  
Work Function ◽  
Process Condition ◽  
Gate Stacks ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K

Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks

2007 ◽  
Vol 102 (3) ◽  
pp. 034514 ◽  
Author(s):  
P. Batude ◽  
X. Garros ◽  
L. Clavelier ◽  
C. Le Royer ◽  
J. M. Hartmann ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Metal Gate ◽  
High K
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