Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor

2009 ◽  
Vol 105 (6) ◽  
pp. 064108 ◽  
Author(s):  
Wenwu Wang ◽  
Koji Akiyama ◽  
Wataru Mizubayashi ◽  
Toshihide Nabatame ◽  
Hiroyuki Ota ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage

scholarly journals Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

2009 ◽  
Vol 94 (20) ◽  
pp. 202112 ◽  
Author(s):  
Takuji Hosoi ◽  
Katsuhiro Kutsuki ◽  
Gaku Okamoto ◽  
Marina Saito ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Carrier Generation ◽  
Voltage Shift ◽  
Flatband Voltage ◽  
Thermally Grown

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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