Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

2008 ◽  
Vol 92 (13) ◽  
pp. 132907 ◽  
Author(s):  
Kunihiko Iwamoto ◽  
Yuuichi Kamimuta ◽  
Arito Ogawa ◽  
Yukimune Watanabe ◽  
Shinji Migita ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Experimental Evidence ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage

scholarly journals Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

2009 ◽  
Vol 94 (20) ◽  
pp. 202112 ◽  
Author(s):  
Takuji Hosoi ◽  
Katsuhiro Kutsuki ◽  
Gaku Okamoto ◽  
Marina Saito ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Carrier Generation ◽  
Voltage Shift ◽  
Flatband Voltage ◽  
Thermally Grown

Impact of native defects in high-k dielectric oxides on GaN/oxide metal-oxide-semiconductor devices

2013 ◽  
Vol 250 (4) ◽  
pp. 787-791 ◽  
Author(s):  
Minseok Choi ◽  
John L. Lyons ◽  
Anderson Janotti ◽  
Chris G. Van de Walle
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Native Defects ◽  
High K ◽  
High K Dielectric
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