Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

2010 ◽  
Vol 97 (6) ◽  
pp. 062901 ◽  
Author(s):  
Xiaolei Wang ◽  
Kai Han ◽  
Wenwu Wang ◽  
Xueli Ma ◽  
Dapeng Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electric Dipole ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Comprehensive Understanding ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage

scholarly journals Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

2009 ◽  
Vol 94 (20) ◽  
pp. 202112 ◽  
Author(s):  
Takuji Hosoi ◽  
Katsuhiro Kutsuki ◽  
Gaku Okamoto ◽  
Marina Saito ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Carrier Generation ◽  
Voltage Shift ◽  
Flatband Voltage ◽  
Thermally Grown

Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiOxNy High-k Gate Dielectrics

2019 ◽  
Vol 35 (3) ◽  
pp. 325-332 ◽  
Author(s):  
T. Das ◽  
Chandreswar Mahata ◽  
G Sutradhar ◽  
P K Bose ◽  
C.K. Maiti
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Semiconductor Device ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

2010 ◽  
Vol 96 (15) ◽  
pp. 152907 ◽  
Author(s):  
Xiaolei Wang ◽  
Kai Han ◽  
Wenwu Wang ◽  
Shijie Chen ◽  
Xueli Ma ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Physical Origin ◽  
Metal Gate ◽  
Gate Structure ◽  
High K
Sign in / Sign up

Export Citation Format

Share Document