Effect of Pad Surface Micro-Texture on Coefficient of Friction and Removal Rate during Copper CMP Process

2011 ◽  
Vol 14 (5) ◽  
pp. H201 ◽  
Author(s):  
X. Liao ◽  
Y. Zhuang ◽  
L. J. Borucki ◽  
S. Theng ◽  
X. Wei ◽  
...  
Keyword(s):  
Coefficient Of Friction ◽  
Removal Rate ◽  
Copper Cmp

Development of “New Abrasive-Free Copper CMP Solutions” BASED on Electrochemical and Film Analysis Method

2002 ◽  
Vol 732 ◽  
Author(s):  
Jin Amanokura ◽  
Yasuo Kamigata ◽  
Masanobu Habiro ◽  
Hiroshi Suzuki ◽  
Masanobu Hanazono
Keyword(s):  
Removal Rate ◽  
Analysis Method ◽  
Film Analysis ◽  
Cu Complex ◽  
Erosion Properties ◽  
Copper Cmp ◽  
Cu Cmp ◽  
Complex Film

AbstractAbrasive-free Cu CMP solutions have been developed to reduce micro-scratches and obtain minimized dishing and erosion properties. During the development of the solutions, some electrochemical examinations were performed. One of the most instructive knowledge was obtained through the Tafel plot. Other attractive data were obtained through Cu complex film analysis. On the basis of these studies were developed and released newly formulated abrasive-free Cu CMP solutions with a high Cu removal rate and excellent topography performance. Mechanism of polishing by applying abrasive-free Cu CMP solutions is also discussed in this paper.

Study on the planarization behaviour of copper CMP utilizing a dense pattern and a global step

2005 ◽  
Vol 867 ◽  
Author(s):  
Tilo Bormann ◽  
Johann W. Bartha
Keyword(s):  
Removal Rate ◽  
Specific Pattern ◽  
Constant Density ◽  
Large Area ◽  
Before And After ◽  
Contour Evolution ◽  
Copper Cmp ◽  
To Come ◽  
Dense Pattern

AbstractThe major aim of CMP is not the removal of excess material but the planarization of the surface. Therefore the determination of the planarization length appears to be more important than the removal rate itself. It has been shown, that the planarization length is not a constant process parameter, but is related to the removal respectively to the polish time in a square root behaviour. Founded on models proposed by Boning, Ouma, et. al. we applied a sequential polish on a single quasi infinite step. The resulting profile could be simulated by a sequential convolution of the surface contour with a Gaussian transfer function.To come closer to the situation on a chip pattern we investigated the planarization behaviour on a specific pattern of the MIT854AZ copper CMP test chip, where a large area of unpatterned surface touches a pattern with a specific constant density.The 200 mm wafer samples consisted of RIE structured oxide films covered with 850 nm ECD copper. The polish was performed on a standard semiconductor manufacturing tool, using a commercial consumables set. The surface profiles were determined by a high resolution profiler within the polishing sequence. The densely patterned areas are removed within a certain polishing time while the transition point between the unpatterned and patterned area appears as a global step. The deposited copper thickness is sufficient to study the contour evolution in both phases, before and after removal of the dense pattern. The paper presents the experimental results on the contour evolution for the patterned fields as well as the global step.

Ultra-High Removal Rate Copper CMP Slurry Development for 3D Application

2019 ◽  
Vol 18 (1) ◽  
pp. 479-484 ◽  
Author(s):  
Bin Hu ◽  
H. Kim ◽  
R. Wen ◽  
Deepak Mahulikar
Keyword(s):  
Removal Rate ◽  
Copper Cmp ◽  
High Removal Rate

scholarly journals Integrated Tribo-Chemical Modeling of Copper CMP

2009 ◽  
Vol 1157 ◽  
Author(s):  
Shantanu Tripathi ◽  
Seungchoun Choi ◽  
Fiona M. Doyle ◽  
David A. Dornfeld
Keyword(s):  
Material Removal ◽  
Mechanical Response ◽  
Removal Rate ◽  
Chemical Model ◽  
Chemical Modeling ◽  
Wear Process ◽  
Local Oxidation ◽  
Copper Cmp ◽  
Underlying Mechanisms ◽  
Electrochemical Phenomena

AbstractCopper CMP is a corrosion-wear process, in which mechanical and chemical-electrochemical phenomena interact synergistically. Existing models generally treat copper CMP as a corrosion enhanced wear process. However, the underlying mechanisms suggest that copper CMP would be better modeled as a wear enhanced corrosion process, where intermittent asperity/abrasive action enhances the local oxidation rate, and is followed by time-dependent passivation of copper. In this work an integrated tribo-chemical model of material removal at the asperity/abrasive scale was developed. Abrasive and pad properties, process parameters, and slurry chemistry are all considered. Three important components of this model are the passivation kinetics of copper in CMP slurry chemicals; the mechanical response of protective films on copper; and the interaction frequency of copper with abrasives/pad asperities. The material removal rate during copper CMP was simulated using the tribo-chemical model, using input parameters obtained experimentally in accompanying research or from the literature.

Effect of Slurry Injection Position on Slurry Mixing, Friction, Removal Rate, and Temperature in Copper CMP

2005 ◽  
Vol 152 (11) ◽  
pp. G841 ◽  
Author(s):  
Yasa Sampurno ◽  
Leonard Borucki ◽  
Ara Philipossian
Keyword(s):  
Removal Rate ◽  
Copper Cmp ◽  
Slurry Injection

Tribology and Removal Rate Characteristics of Abrasive-Free Slurries for Copper CMP Applications

2003 ◽  
Vol 42 (Part 1, No. 11) ◽  
pp. 6809-6814 ◽  
Author(s):  
Darren DeNardis ◽  
Jamshid Sorooshian ◽  
Masanobu Habiro ◽  
Chris Rogers ◽  
Ara Philipossian
Keyword(s):  
Removal Rate ◽  
Copper Cmp

Metrological Assessment of the Coefficient of Friction of Various Types of Silica Using the Motor Current During ILD-CMP

2004 ◽  
Vol 816 ◽  
Author(s):  
Harald Jacobsen ◽  
Eric Stachowiak ◽  
Gerfried Zwicker ◽  
Wolfgang Lortz ◽  
Ralph Brandes
Keyword(s):  
Shear Rate ◽  
Film Thickness ◽  
Coefficient Of Friction ◽  
Removal Rate ◽  
Rate Range ◽  
Systematic Assessment ◽  
Parameter Domain ◽  
Motor Current ◽  
First Approximation ◽  
The Coefficient Of Friction

AbstractIn the work presented the coefficient of friction (COF) was firstly determined metrologically by a systematic assessment of motor currents for different products of pressure and velocity (p v). With all seven test slurries it could be shown that the inserted energy ECMP is proportional to the product of pressure and velocity. The COF of the parameter domain considered here does not depend on the inserted energy or the product of p v in a first approximation. For all tested slurries it was demonstrated that, both the COF and the removal rate (RR) behave analogously (low COF→ low RR).Measurements of the viscosity η have shown that η is not a constant in the shear rate range relevant for CMP. Using the obtained viscosity values a mean slurry film thickness in the range of 2,5 -C 6 μm could be calculated.

Influence of nanofluid application on wheel wear, coefficient of friction and redeposition phenomenon in surface grinding of Ti-6Al-4V

2016 ◽  
Vol 232 (1) ◽  
pp. 128-140 ◽  
Author(s):  
Dinesh Setti ◽  
Sudarsan Ghosh ◽  
Venkateswara Rao Paruchuri
Keyword(s):  
Coefficient Of Friction ◽  
Surface Finish ◽  
High Speed ◽  
Removal Rate ◽  
Chemical Reactivity ◽  
Surface Grinding ◽  
Speed Ratio ◽  
Depth Of Cut ◽  
Work Surface ◽  
Wheel Loading

Difficulties in the grinding of Ti-6Al-4V originate from the three basic properties: poor thermal conductivity, high chemical reactivity and low volume specific heat of the material. Under severe grinding conditions, all these factors together lead to the accelerated wheel loading and redeposition of chips over the work surface. Redeposition and wheel loading have a significant effect on the surface finish, grinding forces, power consumption and wheel life. In this study, water-based Al2O3 nanofluid as metalworking fluid is applied during the surface grinding of Ti-6Al-4V under minimum quantity lubrication mode after dressing the wheel with different dressing overlap ratios. The severity of the redeposition over the work surface was observed by measuring various surface profiles taken perpendicular to the grinding direction at several locations on the ground surface. The nanofluid application was able to prevent redeposition over work surface that became evident from the measured surface finish parameters that results along the grinding direction. Coefficient of friction was estimated On-Machine using the measured forces for different wheel work speed ratios, depth of cut and dressing overlap ratios. The results showed the effectiveness of nanofluid in reducing friction at high material removal rate (i.e. high depth of cut and high speed ratio) conditions when compared to the dry environment. From the measured forces variation with respect to the number of passes, it became evident that, nanofluid application delayed the frequency of wheel loading and grit fracturing cycle, which leads to the increase in the wheel life.

Wafer size effect on material removal rate in copper CMP process

2017 ◽  
Vol 31 (6) ◽  
pp. 2961-2964 ◽  
Author(s):  
Minjong Yuh ◽  
Soocheon Jang ◽  
Inho Park ◽  
Haedo Jeong
Keyword(s):  
Size Effect ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Wafer Size ◽  
Copper Cmp

Performance Comparisons of Abrasive Containing and Abrasive Free Slurries for Copper Low-k CMP

2002 ◽  
Vol 732 ◽  
Author(s):  
John Nguyen ◽  
Gerald Martin ◽  
Ron Carpio ◽  
Malcolm Grief ◽  
Somit Joshi
Keyword(s):  
Removal Rate ◽  
Low Cost ◽  
Copper Removal ◽  
Process Window ◽  
Low Friction ◽  
Cost Of Ownership ◽  
Percent Solid ◽  
Copper Cmp ◽  
Robust Process ◽  
Low K

AbstractThe commercially available abrasive containing slurries for copper CMP have shown some advantages in high removal rates, low friction at low down force, and minimal to no copper residues, regardless of the polisher architecture, either rotary, orbital, or linear polishing. However, the abrasive containing slurries have some disadvantages such as high dishing and erosion with more micro-scratches due to the presence of abrasives. In contrast, the abrasive free polishing slurry has lower removal rate, and seems to be sensitive to polishing architecture, but it has good planarization, low topography, less micro-scratches, and most importantly is insensitive to over-polish.At this stage, the best results for copper CMP are being achieved by the use of the multi-step and multi-slurry process in which copper is polished first, and barrier layers are polished with a different set of consumables. The intent of this paper is to focus on the first step, the copper removal step, and to compare different approaches for this first step; namely, the use of slurries containing abrasives with slurries that are free of abrasives on the orbital polisher. The combined process with low percent solid and small-sized abrasives for the bulk copper removal step and abrasive free polishing (AFP) slurry for the residual copper removal step on an orbital polisher has produced a very robust process window with excellent results including low topography, low erosion, insensitivity to over-polish and low cost of ownership.

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