Effect of Slurry Injection Position on Slurry Mixing, Friction, Removal Rate, and Temperature in Copper CMP

2005 ◽  
Vol 152 (11) ◽  
pp. G841 ◽  
Author(s):  
Yasa Sampurno ◽  
Leonard Borucki ◽  
Ara Philipossian
Keyword(s):  
Removal Rate ◽  
Copper Cmp ◽  
Slurry Injection

Development of “New Abrasive-Free Copper CMP Solutions” BASED on Electrochemical and Film Analysis Method

2002 ◽  
Vol 732 ◽  
Author(s):  
Jin Amanokura ◽  
Yasuo Kamigata ◽  
Masanobu Habiro ◽  
Hiroshi Suzuki ◽  
Masanobu Hanazono
Keyword(s):  
Removal Rate ◽  
Analysis Method ◽  
Film Analysis ◽  
Cu Complex ◽  
Erosion Properties ◽  
Copper Cmp ◽  
Cu Cmp ◽  
Complex Film

AbstractAbrasive-free Cu CMP solutions have been developed to reduce micro-scratches and obtain minimized dishing and erosion properties. During the development of the solutions, some electrochemical examinations were performed. One of the most instructive knowledge was obtained through the Tafel plot. Other attractive data were obtained through Cu complex film analysis. On the basis of these studies were developed and released newly formulated abrasive-free Cu CMP solutions with a high Cu removal rate and excellent topography performance. Mechanism of polishing by applying abrasive-free Cu CMP solutions is also discussed in this paper.

Study on the planarization behaviour of copper CMP utilizing a dense pattern and a global step

2005 ◽  
Vol 867 ◽  
Author(s):  
Tilo Bormann ◽  
Johann W. Bartha
Keyword(s):  
Removal Rate ◽  
Specific Pattern ◽  
Constant Density ◽  
Large Area ◽  
Before And After ◽  
Contour Evolution ◽  
Copper Cmp ◽  
To Come ◽  
Dense Pattern

AbstractThe major aim of CMP is not the removal of excess material but the planarization of the surface. Therefore the determination of the planarization length appears to be more important than the removal rate itself. It has been shown, that the planarization length is not a constant process parameter, but is related to the removal respectively to the polish time in a square root behaviour. Founded on models proposed by Boning, Ouma, et. al. we applied a sequential polish on a single quasi infinite step. The resulting profile could be simulated by a sequential convolution of the surface contour with a Gaussian transfer function.To come closer to the situation on a chip pattern we investigated the planarization behaviour on a specific pattern of the MIT854AZ copper CMP test chip, where a large area of unpatterned surface touches a pattern with a specific constant density.The 200 mm wafer samples consisted of RIE structured oxide films covered with 850 nm ECD copper. The polish was performed on a standard semiconductor manufacturing tool, using a commercial consumables set. The surface profiles were determined by a high resolution profiler within the polishing sequence. The densely patterned areas are removed within a certain polishing time while the transition point between the unpatterned and patterned area appears as a global step. The deposited copper thickness is sufficient to study the contour evolution in both phases, before and after removal of the dense pattern. The paper presents the experimental results on the contour evolution for the patterned fields as well as the global step.

Ultra-High Removal Rate Copper CMP Slurry Development for 3D Application

2019 ◽  
Vol 18 (1) ◽  
pp. 479-484 ◽  
Author(s):  
Bin Hu ◽  
H. Kim ◽  
R. Wen ◽  
Deepak Mahulikar
Keyword(s):  
Removal Rate ◽  
Copper Cmp ◽  
High Removal Rate

scholarly journals Integrated Tribo-Chemical Modeling of Copper CMP

2009 ◽  
Vol 1157 ◽  
Author(s):  
Shantanu Tripathi ◽  
Seungchoun Choi ◽  
Fiona M. Doyle ◽  
David A. Dornfeld
Keyword(s):  
Material Removal ◽  
Mechanical Response ◽  
Removal Rate ◽  
Chemical Model ◽  
Chemical Modeling ◽  
Wear Process ◽  
Local Oxidation ◽  
Copper Cmp ◽  
Underlying Mechanisms ◽  
Electrochemical Phenomena

AbstractCopper CMP is a corrosion-wear process, in which mechanical and chemical-electrochemical phenomena interact synergistically. Existing models generally treat copper CMP as a corrosion enhanced wear process. However, the underlying mechanisms suggest that copper CMP would be better modeled as a wear enhanced corrosion process, where intermittent asperity/abrasive action enhances the local oxidation rate, and is followed by time-dependent passivation of copper. In this work an integrated tribo-chemical model of material removal at the asperity/abrasive scale was developed. Abrasive and pad properties, process parameters, and slurry chemistry are all considered. Three important components of this model are the passivation kinetics of copper in CMP slurry chemicals; the mechanical response of protective films on copper; and the interaction frequency of copper with abrasives/pad asperities. The material removal rate during copper CMP was simulated using the tribo-chemical model, using input parameters obtained experimentally in accompanying research or from the literature.

Tribology and Removal Rate Characteristics of Abrasive-Free Slurries for Copper CMP Applications

2003 ◽  
Vol 42 (Part 1, No. 11) ◽  
pp. 6809-6814 ◽  
Author(s):  
Darren DeNardis ◽  
Jamshid Sorooshian ◽  
Masanobu Habiro ◽  
Chris Rogers ◽  
Ara Philipossian
Keyword(s):  
Removal Rate ◽  
Copper Cmp

Effect of Pad Surface Micro-Texture on Coefficient of Friction and Removal Rate during Copper CMP Process

2011 ◽  
Vol 14 (5) ◽  
pp. H201 ◽  
Author(s):  
X. Liao ◽  
Y. Zhuang ◽  
L. J. Borucki ◽  
S. Theng ◽  
X. Wei ◽  
...  
Keyword(s):  
Coefficient Of Friction ◽  
Removal Rate ◽  
Copper Cmp

Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP

2014 ◽  
Vol 219 ◽  
pp. 143-147 ◽  
Author(s):  
Ara Philipossian ◽  
Len Borucki ◽  
Yasa Sampurno ◽  
Yun Zhuang
Keyword(s):  
Removal Rate ◽  
Pressure Control ◽  
Injection System ◽  
Residual Water ◽  
Reaction Products ◽  
Wafer Level ◽  
Slurry Flows ◽  
Retaining Ring ◽  
Slurry Injection

In commercial CMP tools, slurry is applied near the pad center. As the pad rotates, more than 95% of the fresh slurry flows directly off the surface due to bow wave formation and inertial forces without ever entering the pad-wafer interface, resulting in low slurry utilization [1]. Furthermore, some slurry that manages to go under the wafer stays on the pad, mixes with fresh slurry and re-enters the pad-wafer interface. This used slurry contains reaction products, foam and pad debris (due to pad conditioning) that cause wafer-level defects [2]. Such defect-causing by-products keep recirculating on the pad during polishing and accumulate near the retaining ring over time. Also, since large amounts of DI water are used between wafer polishes to rinse off the debris and reaction products, appreciable amounts of water may stay on the pad and inside the grooves. When fresh slurry is introduced to polish the next wafer, it mixes with the residual water and is diluted, resulting in lower material removal. As such, the current slurry application method does not provide efficient slurry utilization and leaves significant room for improving defect levels. Moreover, the constant sweeping of the conditioner arm during in-situ conditioning results in uneven slurry distribution and introduces additional challenges when it comes to carrier multi-zone pressure control for reduced within-wafer removal rate non-uniformity.

Wafer size effect on material removal rate in copper CMP process

2017 ◽  
Vol 31 (6) ◽  
pp. 2961-2964 ◽  
Author(s):  
Minjong Yuh ◽  
Soocheon Jang ◽  
Inho Park ◽  
Haedo Jeong
Keyword(s):  
Size Effect ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Wafer Size ◽  
Copper Cmp

Performance Comparisons of Abrasive Containing and Abrasive Free Slurries for Copper Low-k CMP

2002 ◽  
Vol 732 ◽  
Author(s):  
John Nguyen ◽  
Gerald Martin ◽  
Ron Carpio ◽  
Malcolm Grief ◽  
Somit Joshi
Keyword(s):  
Removal Rate ◽  
Low Cost ◽  
Copper Removal ◽  
Process Window ◽  
Low Friction ◽  
Cost Of Ownership ◽  
Percent Solid ◽  
Copper Cmp ◽  
Robust Process ◽  
Low K

AbstractThe commercially available abrasive containing slurries for copper CMP have shown some advantages in high removal rates, low friction at low down force, and minimal to no copper residues, regardless of the polisher architecture, either rotary, orbital, or linear polishing. However, the abrasive containing slurries have some disadvantages such as high dishing and erosion with more micro-scratches due to the presence of abrasives. In contrast, the abrasive free polishing slurry has lower removal rate, and seems to be sensitive to polishing architecture, but it has good planarization, low topography, less micro-scratches, and most importantly is insensitive to over-polish.At this stage, the best results for copper CMP are being achieved by the use of the multi-step and multi-slurry process in which copper is polished first, and barrier layers are polished with a different set of consumables. The intent of this paper is to focus on the first step, the copper removal step, and to compare different approaches for this first step; namely, the use of slurries containing abrasives with slurries that are free of abrasives on the orbital polisher. The combined process with low percent solid and small-sized abrasives for the bulk copper removal step and abrasive free polishing (AFP) slurry for the residual copper removal step on an orbital polisher has produced a very robust process window with excellent results including low topography, low erosion, insensitivity to over-polish and low cost of ownership.

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