Ultra-High Removal Rate Copper CMP Slurry Development for 3D Application

2019 ◽  
Vol 18 (1) ◽  
pp. 479-484 ◽  
Author(s):  
Bin Hu ◽  
H. Kim ◽  
R. Wen ◽  
Deepak Mahulikar
Keyword(s):  
Removal Rate ◽  
Copper Cmp ◽  
High Removal Rate

Newly Developed Abrasive-free Copper CMP Slurry Based on Electrochemical Analysis

2007 ◽  
Vol 991 ◽  
Author(s):  
Jin Amanokura ◽  
Katsumi Mabuchi ◽  
Takafumi Sakurada ◽  
Yutaka Nomura ◽  
Masanobu Habiro ◽  
...  
Keyword(s):  
Removal Rate ◽  
Electrochemical Analysis ◽  
Disk Electrode ◽  
Copper Cmp ◽  
High Removal Rate ◽  
Cu Cmp

ABSTRACTIn order to reduce microscratches and obtain minimized dishing and erosion, we have developed new abrasive-free Cu CMP slurries. During the development of these slurries, some electrochemical examination was performed. The most effective knowledge was obtained through the analysis using rotary Cu disk electrode under pressure. On the basis of these studies, new abrasive-free Cu CMP slurries with a high removal rate and excellent planarity were designed and developed. The mechanism of reducing dishing and erosion was also discussed.

Derivation of Optimum Study Factors for Samples Contaminated with Cd Using Electric/Magnetic Field and ORP

2013 ◽  
Vol 813 ◽  
pp. 519-524
Author(s):  
Sang An Ha ◽  
Jei Pil Wang
Keyword(s):  
Magnetic Field ◽  
Heavy Metals ◽  
Removal Rate ◽  
Underground Water ◽  
Liquid Electrode ◽  
Oxidation Reduction ◽  
Oxidation Reduction Potential ◽  
Removal Of Heavy Metals ◽  
High Removal Rate ◽  
Membrane Treatment

A purpose of the present study is to derive optimum study factors for removal of heavy metals using combined alternating current electric/magnetic field and electric membranes for the area contaminated with heavy metals in soil or underground water. ORP (Oxidation Reduction Potential) analysis was conducted to determine an intensity of tendency for oxidation or reduction of the samples contaminated with heavy metals, and electrical membrane treatment was used with adjustment of concentrations and voltages of liquid electrode (Na2SO4) to derive a high removal rate. Removal constants were analyzed to be 0.0417, 0.119, 0.1594 when the voltages were 5V, 10V, 15V, respectively, and treatment efficiency was shown to increase as the liquid electrode concentration was increased. Keywords: heavy metals, electric/magnetic field, ORP, electrical membrane

Numerical Prediction of Contaminant Removal from Cavity in Horizontal Channel by Constrained Interpolated Profile Method

2014 ◽  
Vol 695 ◽  
pp. 384-388
Author(s):  
Nor Azwadi Che Sidik ◽  
A.S. Ahmad Sofianuddin ◽  
K.Y. Ahmat Rajab
Keyword(s):  
Reynolds Number ◽  
Aspect Ratio ◽  
Removal Rate ◽  
Contaminant Removal ◽  
Square Cavity ◽  
Profile Method ◽  
Aspect Ratios ◽  
Contaminants Removal ◽  
Parabolic Flow ◽  
High Removal Rate

In this paper, Constrained Interpolated Profile Method (CIP) was used to simulate contaminants removal from square cavity in channel flow. Predictions were conducted for the range of aspect ratios from 0.25 to 4.0. The inlet parabolic flow with various Reynolds number from 50 to 1000 was used for the whole presentation with the same properties of contaminants and fluid. The obtained results indicated that the percentage of removal increased at high aspect ratio of cavity and higher Reynolds number of flow but it shows more significant changes as increasing aspect ratio rather than increasing Reynolds number. High removal rate was found at the beginning of the removal process.

High removal rate MRF[TM]

2021 ◽  
Author(s):  
William Messner ◽  
Christopher A. Hall
Keyword(s):  
Removal Rate ◽  
High Removal Rate

Preparation of Calcium Sulfate Anhydrate Whisker and a Primary Investigation of its Arsenic Removal Performance

2013 ◽  
Vol 690-693 ◽  
pp. 1013-1019
Author(s):  
Xiao Juan Chen ◽  
Liu Chun Yang ◽  
Jun Feng Zhang ◽  
Yan Huang
Keyword(s):  
Calcium Sulfate ◽  
Arsenic Removal ◽  
Removal Rate ◽  
Optical Microscope ◽  
Alkaline Condition ◽  
Crystal Water ◽  
Arsenic Uptake ◽  
Ft Ir ◽  
High Removal Rate ◽  
Calcium Sulfate Whisker

Calcium sulfate whisker (CSW) was prepared through the method of cooling recrystallization. In an attempt to develop its new application in environmental protection, we investigated the effect of calcination on the material properties and arsenic uptake performance of calcium sulfate whisker anhydrate (CSAW), which was obtained from CSW calcined at 600 °C for 2 h. Moreover, XRD, SEM, optical microscope, and FT-IR were used to characterize CSW samples. It was found that calcination played an important role in the whisker structure through changing the content of crystal water and the morphology. The CSAW material exhibited a high removal rate of As3+/As5+under strongly alkaline condition.

scholarly journals Effects of microhabitat on rodent-mediated seed removal of endangered Kmeria septentrionalis in the karst habitat

PeerJ ◽  
2020 ◽  
Vol 8 ◽  
pp. e10378
Author(s):  
Guohai Wang ◽  
Yang Pan ◽  
Guole Qin ◽  
Weining Tan ◽  
Changhu Lu
Keyword(s):  
Predation Risk ◽  
Rattus Norvegicus ◽  
Removal Rate ◽  
Soil Surface ◽  
Predation Rate ◽  
Seed Removal ◽  
Seed Type ◽  
Stone Surface ◽  
Broad Variety ◽  
High Removal Rate

Seed removal behaviors of rodents are largely influenced by microhabitat. Although the karst ecosystem is composed of a broad variety of microhabitats, we have no information on how they affect such behaviors. We investigated rodents’ seed removal behaviors in four karst microhabitats (stone cavern, stone groove, stone surface, and soil surface) using three types of Kmeria septentrionalis seeds: fresh, black (intact seeds with black aril that dehydrates and darkens), and exposed (clean seeds without the aril). We show that Rattus norvegicus, Leopoldamys edwardsi and Rattus flavipectus were the predominant seed predators. Even though all seed types experienced a high removal rate in all four microhabitats, but rodents preferentially removed seeds from the three stone microhabitats (stone caves: 69.71 ± 2.74%; stone surface: 60.53 ± 2.90%; stone groove: 56.94 ± 2.91%) compared to the soil surface (53.90 ± 2.92%). Seeds that had been altered by being exposed to the environment were more attractive to rodents than fresh seeds (76.25 ± 2.20% versus 36.18 ± 2.29%). The seed removal behavior of rodents was significantly affected by the microhabitat and seed type. Finally, seeds that had fallen on the soil surface microhabitat incurred a lower predation risk than seeds fallen on other microhabitats, which increased their probability to germinate. Our results indicate that the lower predation rate of seeds from the endangered K. septentrionalis dropped on the soil surface increases trees’ likelihood of survival.

Development of “New Abrasive-Free Copper CMP Solutions” BASED on Electrochemical and Film Analysis Method

2002 ◽  
Vol 732 ◽  
Author(s):  
Jin Amanokura ◽  
Yasuo Kamigata ◽  
Masanobu Habiro ◽  
Hiroshi Suzuki ◽  
Masanobu Hanazono
Keyword(s):  
Removal Rate ◽  
Analysis Method ◽  
Film Analysis ◽  
Cu Complex ◽  
Erosion Properties ◽  
Copper Cmp ◽  
Cu Cmp ◽  
Complex Film

AbstractAbrasive-free Cu CMP solutions have been developed to reduce micro-scratches and obtain minimized dishing and erosion properties. During the development of the solutions, some electrochemical examinations were performed. One of the most instructive knowledge was obtained through the Tafel plot. Other attractive data were obtained through Cu complex film analysis. On the basis of these studies were developed and released newly formulated abrasive-free Cu CMP solutions with a high Cu removal rate and excellent topography performance. Mechanism of polishing by applying abrasive-free Cu CMP solutions is also discussed in this paper.

Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement

2014 ◽  
Vol 778-780 ◽  
pp. 759-762 ◽  
Author(s):  
Yasuhisa Sano ◽  
Hiroaki Nishikawa ◽  
Yuu Okada ◽  
Kazuya Yamamura ◽  
Satoshi Matsuyama ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Removal Rate ◽  
Atmospheric Pressure Plasma ◽  
Etching Process ◽  
Plasma Confinement ◽  
Plasma Etching Process ◽  
Pressure Plasma ◽  
High Removal Rate ◽  
Sic Wafer

Silicon carbide (SiC) is a promising semiconductor material for high-temperature, high-frequency, high-power, and energy-saving applications. However, because of the hardness and chemical stability of SiC, few conventional machining methods can handle this material efficiently. A plasma chemical vaporization machining (PCVM) technique is an atmospheric-pressure plasma etching process. We previously proposed a novel style of PCVM dicing using slit apertures for plasma confinement, which in principle can achieve both a high removal rate and small kerf loss, and demonstration experiments were performed using a silicon wafer as a sample. In this research, some basic experiments were performed using 4H-SiC wafer as a sample, and a maximum removal rate of approximately 10 μm/min and a narrowest groove width of 25 μm were achieved. We also found that argon can be used for plasma generation instead of expensive helium gas.

Study on the planarization behaviour of copper CMP utilizing a dense pattern and a global step

2005 ◽  
Vol 867 ◽  
Author(s):  
Tilo Bormann ◽  
Johann W. Bartha
Keyword(s):  
Removal Rate ◽  
Specific Pattern ◽  
Constant Density ◽  
Large Area ◽  
Before And After ◽  
Contour Evolution ◽  
Copper Cmp ◽  
To Come ◽  
Dense Pattern

AbstractThe major aim of CMP is not the removal of excess material but the planarization of the surface. Therefore the determination of the planarization length appears to be more important than the removal rate itself. It has been shown, that the planarization length is not a constant process parameter, but is related to the removal respectively to the polish time in a square root behaviour. Founded on models proposed by Boning, Ouma, et. al. we applied a sequential polish on a single quasi infinite step. The resulting profile could be simulated by a sequential convolution of the surface contour with a Gaussian transfer function.To come closer to the situation on a chip pattern we investigated the planarization behaviour on a specific pattern of the MIT854AZ copper CMP test chip, where a large area of unpatterned surface touches a pattern with a specific constant density.The 200 mm wafer samples consisted of RIE structured oxide films covered with 850 nm ECD copper. The polish was performed on a standard semiconductor manufacturing tool, using a commercial consumables set. The surface profiles were determined by a high resolution profiler within the polishing sequence. The densely patterned areas are removed within a certain polishing time while the transition point between the unpatterned and patterned area appears as a global step. The deposited copper thickness is sufficient to study the contour evolution in both phases, before and after removal of the dense pattern. The paper presents the experimental results on the contour evolution for the patterned fields as well as the global step.

scholarly journals Mechanism of the High Removal Rate of Cobalt in Conventional Cementation by Zinc Dust with Arsenic Oxide in the Presence of Cupturic Ions.

2000 ◽  
Vol 116 (9) ◽  
pp. 779-783 ◽  
Author(s):  
Takeshi OHGAI ◽  
Hisaaki FUKUSHIMA ◽  
Tetsuya AKIYAMA ◽  
Shinichi HEGURI
Keyword(s):  
Zinc Dust ◽  
Removal Rate ◽  
Arsenic Oxide ◽  
High Removal Rate
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