Resistive Switching Behavior in the Ru∕Y[sub 2]O[sub 3]∕TaN Nonvolatile Memory Device

2011 ◽  
Vol 14 (1) ◽  
pp. H27 ◽  
Author(s):  
Tung-Ming Pan ◽  
Kai-Ming Chen ◽  
Chih-Hung Lu
2016 ◽  
Vol 4 (3) ◽  
pp. 589-595 ◽  
Author(s):  
Chun-Yan Wu ◽  
Xin-Gang Wang ◽  
Zhi-Qiang Pan ◽  
You-Yi Wang ◽  
Yong-Qiang Yu ◽  
...  

A memory device was fabricated based on KCu7S4nanobelts/Cu Schottky diode which displayed typical resistive switching behavior with a low set voltage of 0.4–1 V, a current ON/OFF ratio of ∼104, and a retention time >104s.


2019 ◽  
Vol 4 (3) ◽  
pp. 697-704 ◽  
Author(s):  
Xiaoli Chen ◽  
Pu Huang ◽  
Xin Zhu ◽  
Suixing Zhuang ◽  
Hengcheng Zhu ◽  
...  

Keggin-type polyoxometalate (POM) cluster based non-volatile memory has been investigated, and the molecular reconfiguration induced by the reduction process of POM molecules is proposed to initialize the resistive switching behavior.


2013 ◽  
Vol 138 (2-3) ◽  
pp. 623-627 ◽  
Author(s):  
Youn Hee Kang ◽  
Tae Il Lee ◽  
Kyeong-Ju Moon ◽  
Jiwon Moon ◽  
Kwon Hong ◽  
...  

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