Facial synthesis of KCu7S4nanobelts for nonvolatile memory device applications

2016 ◽  
Vol 4 (3) ◽  
pp. 589-595 ◽  
Author(s):  
Chun-Yan Wu ◽  
Xin-Gang Wang ◽  
Zhi-Qiang Pan ◽  
You-Yi Wang ◽  
Yong-Qiang Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Schottky Diode ◽  
Retention Time ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Nonvolatile Memory Device ◽  
Device Applications ◽  
A Current

A memory device was fabricated based on KCu7S4nanobelts/Cu Schottky diode which displayed typical resistive switching behavior with a low set voltage of 0.4–1 V, a current ON/OFF ratio of ∼104, and a retention time >104s.

A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications

2007 ◽  
Vol 101 (2) ◽  
pp. 026109 ◽  
Author(s):  
Seong-Wan Ryu ◽  
Yang-Kyu Choi ◽  
Chan Bin Mo ◽  
Soon Hyung Hong ◽  
Pan Kwi Park ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Modulation Effect ◽  
Nonvolatile Memory Device ◽  
Device Applications
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