Resistive Switching Behavior in Gelatin Thin Films for Nonvolatile Memory Application

2014 ◽  
Vol 6 (8) ◽  
pp. 5413-5421 ◽  
Author(s):  
Yu-Chi Chang ◽  
Yeong-Her Wang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

2010 ◽  
Vol 97 (23) ◽  
pp. 232904 ◽  
Author(s):  
Jung Ho Yoon ◽  
Kyung Min Kim ◽  
Min Hwan Lee ◽  
Seong Keun Kim ◽  
Gun Hwan Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Tio2 Thin Films

Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications

2015 ◽  
Vol 1729 ◽  
pp. 23-28 ◽  
Author(s):  
Yogesh Sharma ◽  
Pankaj Misra ◽  
Shojan P. Pavunny ◽  
Ram S. Katiyar
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Resistive Switching ◽  
High Resistance ◽  
Rare Earth Oxide ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Device Structure ◽  
Resistance State ◽  
Unipolar Resistive Switching

ABSTRACTRare-earth oxides have attracted considerable research interest in resistive random access memories (ReRAMs) due to their compatibility with complementary metal-oxide semiconductor (CMOS) process. To this end we report unipolar resistive switching in a novel ternary rare-earth oxide LaHoO3 (LHO) to accelerate progress and to support advances in this emerging densely scalable research architecture. Amorphous thin films of LHO were fabricated on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition, followed by sputter deposition of platinum top electrode through shadow mask in order to elucidate the resistive switching behavior of the resulting Pt/LHO/Pt metal-insulator-metal (MIM) device structure. Stable unipolar resistive switching characteristics with interesting switching parameters like, high resistance ratio of about 105 between high resistance state (HRS) and low resistance state (LRS), non-overlapping switching voltages with narrow dispersion, and excellent retention and endurance features were observed in Pt/LHO/Pt device structure. The observed resistive switching in LHO was explained by the formation/rupture of conductive filaments formed out of oxygen vacancies and metallic Ho atom. From the current-voltage characteristics of Pt/LHO/Pt structure, the conduction mechanism in LRS and HRS was found to be dominated by Ohm’s law and Poole-Frenkel emission, respectively.

Keggin-type polyoxometalate cluster as an active component for redox-based nonvolatile memory

2019 ◽  
Vol 4 (3) ◽  
pp. 697-704 ◽  
Author(s):  
Xiaoli Chen ◽  
Pu Huang ◽  
Xin Zhu ◽  
Suixing Zhuang ◽  
Hengcheng Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Active Component ◽  
Reduction Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Keggin Type ◽  
Non Volatile Memory ◽  
Volatile Memory

Keggin-type polyoxometalate (POM) cluster based non-volatile memory has been investigated, and the molecular reconfiguration induced by the reduction process of POM molecules is proposed to initialize the resistive switching behavior.

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