Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1–xBixI3 Perovskite-Based Memory Device

2018 ◽  
Vol 10 (29) ◽  
pp. 24620-24626 ◽  
Author(s):  
Shuaipeng Ge ◽  
Yuhang Wang ◽  
Zhongcheng Xiang ◽  
Yimin Cui
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Reset Voltage ◽  
Voltage Dependent

Facial synthesis of KCu7S4nanobelts for nonvolatile memory device applications

2016 ◽  
Vol 4 (3) ◽  
pp. 589-595 ◽  
Author(s):  
Chun-Yan Wu ◽  
Xin-Gang Wang ◽  
Zhi-Qiang Pan ◽  
You-Yi Wang ◽  
Yong-Qiang Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Schottky Diode ◽  
Retention Time ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Nonvolatile Memory Device ◽  
Device Applications ◽  
A Current

A memory device was fabricated based on KCu7S4nanobelts/Cu Schottky diode which displayed typical resistive switching behavior with a low set voltage of 0.4–1 V, a current ON/OFF ratio of ∼104, and a retention time >104s.

scholarly journals Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1361
Author(s):  
Fengzhen Lv ◽  
Tingting Zhong ◽  
Yongfu Qin ◽  
Haijun Qin ◽  
Wenfeng Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Indium Tin Oxide ◽  
Double Perovskite ◽  
Memory Device ◽  
Lead Free ◽  
Switching Behavior ◽  
Light Illumination ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Ito Glass

Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs2AgBiBr6 films with dense surfaces and uniform grains were prepared by the low-temperature sol-gel method on indium tin oxide (ITO) substrates. A memory device based on a lead-free double perovskite Cs2AgBiBr6 film, Pt/Cs2AgBiBr6/ITO/glass, presents obvious bipolar resistive switching behavior. The ROFF/RON ratio under 445 nm wavelength light illumination is ~100 times greater than that in darkness. A long retention capability (>2400 s) and cycle-to-cycle consistency (>500 times) were observed in this device under light illumination. The resistive switching behavior is primarily attributed to the trap-controlled space-charge-limited current mechanism caused by bromine vacancies in the Cs2AgBiBr6 medium layer. Light modulates resistive states by regulating the condition of photo-generated carriers and changing the Schottky-like barrier of the Pt/Cs2AgBiBr6 interface under bias voltage sweeping.

Possible application of lead sulfide quantum dot in memory device

2016 ◽  
Vol 36 (3) ◽  
pp. 293-297 ◽  
Author(s):  
Sweety Sarma
Keyword(s):  
Resistive Switching ◽  
Coulomb Blockade ◽  
Conduction Mechanism ◽  
Hysteresis Loops ◽  
High Resistance State ◽  
Memory Device ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Resistance State ◽  
Unipolar Resistive Switching

Abstract Unipolar resistive switching behavior was observed in the as-fabricated Al/PVA/PbS QD/ITO device with ROFF/RON ratio of 3.15×103 with retentivity for prolonged time and repeatability of hysteresis loops. Schottky emission mechanism dominates conduction mechanism in low-resistance state and high-resistance state of the device. Unipolar resistive switching behavior observed in the device is attributed to Coulomb blockade. The observed characteristic in the device points toward possible application of PbS QDs in memory device.

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