Keggin-type polyoxometalate cluster as an active component for redox-based nonvolatile memory

2019 ◽  
Vol 4 (3) ◽  
pp. 697-704 ◽  
Author(s):  
Xiaoli Chen ◽  
Pu Huang ◽  
Xin Zhu ◽  
Suixing Zhuang ◽  
Hengcheng Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Active Component ◽  
Reduction Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Keggin Type ◽  
Non Volatile Memory ◽  
Volatile Memory

Keggin-type polyoxometalate (POM) cluster based non-volatile memory has been investigated, and the molecular reconfiguration induced by the reduction process of POM molecules is proposed to initialize the resistive switching behavior.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Memristive behavior in BaTiO3/La0.7Sr0.3MnO3 heterostructures integrated with semiconductors

MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 275-280 ◽  
Author(s):  
Srinivasa Rao Singamaneni ◽  
John Prater ◽  
Bongmook Lee ◽  
Veena Misra ◽  
Jay Narayan
Keyword(s):  
Resistive Switching ◽  
Ferroelectric Materials ◽  
Hysteretic Behavior ◽  
Buffer Layers ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memristive Behavior ◽  
Non Volatile Memory ◽  
Piezo Force Microscopy ◽  
Memory Applications

ABSTRACTFerroelectric materials such as BaTiO3 have been studied for emerging non-volatile memory applications. However, most of the previous work has been focused on this material when it was deposited on insulting oxide substrates such as SrTiO3. Unfortunately, this substrate is not suitable for CMOS-based microelectronics applications. This motivated us to carry out the present work. We have studied the resistive switching behavior in BaTiO3/La0.7Sr0.3MnO3 (BTO/LSMO) heterostructures integrated with semiconducting substrates Si (100) using MgO/TiN buffer layers by pulsed laser deposition. Current-Voltage (I-V) measurements were conducted on BTO (500nm)/LSMO (25nm) devices at 200K. We have observed a broad hysteresis in forward and reverse voltage sweeps which is an important property for memory applications. Secondly, the RON/ROFF ratio is estimated at ∼ 150, consistent with the reported numbers (30-100) in the literature. Thirdly, the device is stable at least up to 50 cycles. However, we found that hysteretic behavior was suppressed upon oxygen annealing of the device at 1 atmospheric pressure, 200° C for 1hr, inferring the important role of oxygen vacancies in the resistive switching behavior of BTO/LSMO device. Future work will focus on investigating the correlation between ferroelectricity and resistive switching in these devices using local probe technique piezo force microscopy (PFM) technique.

Sign in / Sign up

Export Citation Format

Share Document