Interfacial and Electrical Characterization of Atomic-Layer-Deposited HfO[sub 2] Gate Dielectric on High Mobility Epitaxial GaAs/Ge Channel Substrates

2010 ◽  
Vol 157 (8) ◽  
pp. H825 ◽  
Author(s):  
G. K. Dalapati ◽  
M. K. Kumar ◽  
C. K. Chia ◽  
H. Gao ◽  
B. Z. Wang ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
High Mobility ◽  
Electrical Characterization ◽  
Atomic Layer ◽  
Epitaxial Gaas

Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC Substrates

2015 ◽  
Vol 821-823 ◽  
pp. 937-940 ◽  
Author(s):  
Toby Hopf ◽  
Konstantin Vassilevski ◽  
Enrique Escobedo-Cousin ◽  
Peter King ◽  
Nicholas G. Wright ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Vacuum Sublimation ◽  
Layer Deposition ◽  
High K

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.

Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors

2012 ◽  
Author(s):  
Anindita Das ◽  
Sanatan Chattopadhyay ◽  
Goutam K. Dalapati ◽  
Dongzhi Chi ◽  
M. K. Kumar
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Mos Capacitors

scholarly journals Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1

1991 ◽  
Vol 58 (5) ◽  
pp. 478-480 ◽  
Author(s):  
C. R. Stanley ◽  
M. C. Holland ◽  
A. H. Kean ◽  
M. B. Stanaway ◽  
R. T. Grimes ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Electrical Characterization ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Compact Electrical Characterization of Nano-CMOS Transistor with 1.2nm Ultrathin Gate Dielectric

2003 ◽  
Author(s):  
Hee Sung Kang ◽  
Wu-yun Quan ◽  
Kyung Soo Kim ◽  
Chang Bong Oh ◽  
Hyuk Ju Ryu ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Electrical Characterization ◽  
Cmos Transistor
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