Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors

2012 ◽  
Author(s):  
Anindita Das ◽  
Sanatan Chattopadhyay ◽  
Goutam K. Dalapati ◽  
Dongzhi Chi ◽  
M. K. Kumar
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Mos Capacitors

scholarly journals Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

2016 ◽  
Vol 2016 ◽  
pp. 1-4 ◽  
Author(s):  
Z. N. Khan ◽  
S. Ahmed ◽  
M. Ali
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Device Fabrication ◽  
Process Window ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Hafnium Silicate ◽  
Gate Electrodes ◽  
Layer Deposition ◽  
Tin Metal

Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic Layer Deposition (ALD) process parameters. Gate element of the device has undergone a detailed postmetal annealed sequence ranging from 100°C to 1000°C. The applicability of ultrathin TiN on gate electrodes is established through current density versus voltage (J-V), resistance versus temperature (R-T), and permittivity versus temperature analysis. A higher process window starting from 600°C was intentionally chosen to understand the energy efficient behavior expected from ultrathin gate metallization and its unique physical state with shrinking thickness. The device characteristics in form of effective electronic mobility as a function of inverse charge density were also found better than those conventional gate stacks used for EOT scaling.

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

2011 ◽  
Vol 276 ◽  
pp. 87-93
Author(s):  
Y.Y. Gomeniuk ◽  
Y.V. Gomeniuk ◽  
A. Nazarov ◽  
P.K. Hurley ◽  
Karim Cherkaoui ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Oxide ◽  
Interface State ◽  
Channel Length ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Threshold Voltages

The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO3/Si interface is presented and typical maxima of 1.2×1011 eV–1cm–2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 µm and 50 µm, respectively) are presented. The front channel mobility appeared to be 126 cm2V–1s–1 and 70 cm2V–1s–1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

scholarly journals Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

2012 ◽  
Vol 7 (1) ◽  
Author(s):  
Goutam Kumar Dalapati ◽  
Terence Kin Shun Wong ◽  
Yang Li ◽  
Ching Kean Chia ◽  
Anindita Das ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Gate Stack ◽  
Mos Capacitors ◽  
Zn Doping ◽  
Epitaxial Gaas ◽  
P Type

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition

2007 ◽  
Vol 47 (4-5) ◽  
pp. 825-829 ◽  
Author(s):  
P. Taechakumput ◽  
S. Taylor ◽  
O. Buiu ◽  
R.J. Potter ◽  
P.R. Chalker ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Electrical Characterization ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Liquid Injection
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