Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaN[sub x] on Adhesion with Copper

2010 ◽  
Vol 157 (2) ◽  
pp. G62 ◽  
Author(s):  
Chih-Chieh Chang ◽  
Fu-Ming Pan ◽  
Ching-Wen Chen
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Surface Reduction ◽  
Chemical Vapor Deposited ◽  
Effect Of Surface

Structure of Chalcogen-Stabilized GaAs Interface

1992 ◽  
Vol 281 ◽  
Author(s):  
Shinichiro Takatani ◽  
Asao Nakano ◽  
Kiyoshi Ogata ◽  
Takeshi Kikawa ◽  
Masatoshi Nakazawa
Keyword(s):  
Fine Structure ◽  
Silicon Dioxide ◽  
Crystal Orientation ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Model ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
X Ray Absorption

ABSTRACTA photo chemical vapor deposited silicon dioxide - gallium arsenide interface treated by a selenium(Se)-molecular beam is investigated using extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows the presence of Ga2Se3-related compound at the SiO2/GaAs interface, indicating that the Ga2Se3 layer formed by the Se-treatment is preserved after the deposition of the SiO2film. The effective coordination number of the Se atoms is found to depend on the direction of the polarizing vector with respect to the crystal orientation. An attempt is made to interpret this dependence using a simple atomic layer model.

Effect of surface roughness on field emission from chemical vapor deposited polycrystalline diamond

2001 ◽  
Vol 79 (9) ◽  
pp. 1288-1290 ◽  
Author(s):  
N. Koenigsfeld ◽  
R. Kalish ◽  
A. Cimmino ◽  
D. Hoxley ◽  
S. Prawer ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Field Emission ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Chemical Vapor Deposited ◽  
Effect Of Surface

Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

2012 ◽  
Vol 24 (24) ◽  
pp. 4686-4692 ◽  
Author(s):  
Jeong Hwan Han ◽  
Woongkyu Lee ◽  
Woojin Jeon ◽  
Sang Woon Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Chemical Vapor Deposited

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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