Relationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemical-vapor-deposited Hf–O films on Si

2004 ◽  
Vol 95 (9) ◽  
pp. 5042-5048 ◽  
Author(s):  
S. K. Dey ◽  
A. Das ◽  
M. Tsai ◽  
D. Gu ◽  
M. Floyd ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Chemical Vapor Deposited

Structure of Chalcogen-Stabilized GaAs Interface

1992 ◽  
Vol 281 ◽  
Author(s):  
Shinichiro Takatani ◽  
Asao Nakano ◽  
Kiyoshi Ogata ◽  
Takeshi Kikawa ◽  
Masatoshi Nakazawa
Keyword(s):  
Fine Structure ◽  
Silicon Dioxide ◽  
Crystal Orientation ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Model ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
X Ray Absorption

ABSTRACTA photo chemical vapor deposited silicon dioxide - gallium arsenide interface treated by a selenium(Se)-molecular beam is investigated using extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows the presence of Ga2Se3-related compound at the SiO2/GaAs interface, indicating that the Ga2Se3 layer formed by the Se-treatment is preserved after the deposition of the SiO2film. The effective coordination number of the Se atoms is found to depend on the direction of the polarizing vector with respect to the crystal orientation. An attempt is made to interpret this dependence using a simple atomic layer model.

Highly Scalable ALD-deposited Hafnium Silicate Gate Stacks for Low Standby Power Applications

2006 ◽  
Vol 917 ◽  
Author(s):  
Johan Swerts ◽  
Wim Deweerd ◽  
Chang-gong Wang ◽  
Yanina Fedorenko ◽  
Annelies Delabie ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Equivalent Oxide Thickness ◽  
Gate Leakage ◽  
Gate Stacks ◽  
Hafnium Silicate ◽  
Scaling Potential

AbstractThe electrical performance of hafnium silicate (HfSiOx) gate stacks grown by atomic layer deposition (ALD) has been evaluated in capacitors and transistors. First, scaling potential of HfSiOx layers was studied as function of composition and thickness. It is shown that the equivalent oxide thickness scales down with decreasing layer thickness and increasing Hf-content. The gate leakage (at Vfb-1V), however, is mainly determined by the physical layer thickness. For the same equivalent oxide thickness (EOT) target, the lowest leakage is observed for the layers with the highest Hf-content. Leakage values as low as 1x10-3 A/cm2 for an equivalent oxide thickness of 1.3 nm have been obtained. Second, the thermal stability against crystallization of the ALD HfSiOx has been studied and related to their electrical properties. The thermal stability of HfSiOx decreases with increasing Hf-content that necessitates the use of nitridation. The influence of various annealing conditions on the nitrogen incorporation is also studied. Finally, the effect of HfSiOx composition and postdeposition nitridation is discussed on transistor level. TaN metal gate transistor data indicate that nitridation reduces the gate leakage and that Hf-rich HfSiOx layers show the best scaling potential, i.e., highest performance for the lowest gate leakage.

Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

2012 ◽  
Vol 24 (24) ◽  
pp. 4686-4692 ◽  
Author(s):  
Jeong Hwan Han ◽  
Woongkyu Lee ◽  
Woojin Jeon ◽  
Sang Woon Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Chemical Vapor Deposited

Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition

2006 ◽  
Vol 153 (8) ◽  
pp. F180 ◽  
Author(s):  
Annelies Delabie ◽  
Matty Caymax ◽  
Bert Brijs ◽  
David P. Brunco ◽  
Thierry Conard ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Layer Deposition
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