Evaluation of integrity and barrier performance of atomic layer deposited WNxCy films on plasma enhanced chemical vapor deposited SiO2 for Cu metallization

2006 ◽  
Vol 89 (8) ◽  
pp. 081913 ◽  
Author(s):  
Ki-Su Kim ◽  
Moon-Sang Lee ◽  
Sung-Soo Yim ◽  
Hyun-Mi Kim ◽  
Ki-Bum Kim ◽  
...  
1992 ◽  
Vol 281 ◽  
Author(s):  
Shinichiro Takatani ◽  
Asao Nakano ◽  
Kiyoshi Ogata ◽  
Takeshi Kikawa ◽  
Masatoshi Nakazawa

ABSTRACTA photo chemical vapor deposited silicon dioxide - gallium arsenide interface treated by a selenium(Se)-molecular beam is investigated using extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows the presence of Ga2Se3-related compound at the SiO2/GaAs interface, indicating that the Ga2Se3 layer formed by the Se-treatment is preserved after the deposition of the SiO2film. The effective coordination number of the Se atoms is found to depend on the direction of the polarizing vector with respect to the crystal orientation. An attempt is made to interpret this dependence using a simple atomic layer model.


1999 ◽  
Vol 146 (10) ◽  
pp. 3724-3730 ◽  
Author(s):  
Sung‐Lae Cho ◽  
Ki‐Bum Kim ◽  
Seok‐Hong Min ◽  
Hyun‐Kook Shin ◽  
Sam‐Dong Kimd

2012 ◽  
Vol 24 (24) ◽  
pp. 4686-4692 ◽  
Author(s):  
Jeong Hwan Han ◽  
Woongkyu Lee ◽  
Woojin Jeon ◽  
Sang Woon Lee ◽  
Cheol Seong Hwang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document