Structure of Chalcogen-Stabilized GaAs Interface

1992 ◽  
Vol 281 ◽  
Author(s):  
Shinichiro Takatani ◽  
Asao Nakano ◽  
Kiyoshi Ogata ◽  
Takeshi Kikawa ◽  
Masatoshi Nakazawa
Keyword(s):  
Fine Structure ◽  
Silicon Dioxide ◽  
Crystal Orientation ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Model ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
X Ray Absorption

ABSTRACTA photo chemical vapor deposited silicon dioxide - gallium arsenide interface treated by a selenium(Se)-molecular beam is investigated using extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows the presence of Ga2Se3-related compound at the SiO2/GaAs interface, indicating that the Ga2Se3 layer formed by the Se-treatment is preserved after the deposition of the SiO2film. The effective coordination number of the Se atoms is found to depend on the direction of the polarizing vector with respect to the crystal orientation. An attempt is made to interpret this dependence using a simple atomic layer model.

Extended X-ray Absorption Fine Structure Studies of GaN Epilayers Doped in situ with Er and Eu During Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
V. Katchkanov ◽  
J. F. W. Mosselmans ◽  
S. Dalmasso ◽  
K. P. O'Donnell ◽  
R. W. Martin ◽  
...  
Keyword(s):  
Fine Structure ◽  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Local Structure ◽  
Molecular Beam ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption ◽  
The Eu

ABSTRACTThe local structure around Er and Eu atoms introduced into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure above the appropriate rare-earth X-ray absorption edge. The samples were doped in situ during growth by Molecular Beam Epitaxy. The formation of ErN clusters was found in samples with high average Er concentrations of 32±6% and 12.4±0.8%, estimated by Wavelength Dispersive X-ray analysis. When the average Er concentration is decreased to 6.0±0.2%, 1.6±0.2% and 0.17±0.02%, Er is found in localised clusters of ErGaN phase with high local Er content. Similar behaviour is observed for Eu-doped samples. For an average Eu concentration of 30.5±0.5% clusters of pure EuN occur. Decreasing the Eu concentration to 10.4±0.5% leads to EuGaN clusters with high local Eu content. However, for a sample with an Eu concentration of 14.2±0.5% clustering of Eu was not observed.

X‐ray absorption fine structure of diamond films grown by chemical vapor deposition

1989 ◽  
Vol 55 (10) ◽  
pp. 957-959 ◽  
Author(s):  
T. W. Capehart ◽  
T. A. Perry ◽  
C. B. Beetz ◽  
D. N. Belton ◽  
G. B. Fisher ◽  
...  
Keyword(s):  
Fine Structure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

Gas source molecular beam epitaxy and X-ray absorption fine structure characterization of InGaAs/InP short period superlattices

1994 ◽  
Vol 136 (1-4) ◽  
pp. 287-292 ◽  
Author(s):  
Teruo Mozume ◽  
Hideo Kashima ◽  
Kazuhiko Hosomi ◽  
Kiyoshi Ogata ◽  
Kazuhumi Suenaga ◽  
...  
Keyword(s):  
Fine Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structure Characterization ◽  
X Ray ◽  
Gas Source ◽  
Short Period ◽  
Short Period Superlattices ◽  
X Ray Absorption
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