Characterization of high-density plasma CVD USG film

1997 ◽  
Author(s):  
Wei Lu ◽  
Jia Z. Zheng ◽  
John Sudijuno ◽  
Hoon L. Yap ◽  
Kok S. Fam ◽  
...  
Keyword(s):  
High Density ◽  
Plasma Cvd ◽  
Density Plasma

Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

1999 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
...  
Keyword(s):  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Density Plasma

Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material

2006 ◽  
Author(s):  
B. A. Park ◽  
C. A. Musca ◽  
J. Antoszewski ◽  
T. Nguyen ◽  
K. J. Winchester ◽  
...  
Keyword(s):  
Carrier Transport ◽  
High Density ◽  
Density Plasma

Characterization of the surface layer of GaAs nitrided by high-density plasma

2001 ◽  
Vol 175-176 ◽  
pp. 585-590 ◽  
Author(s):  
Kanji Yasui ◽  
Yuko Tsukada ◽  
Tatsuro Arayama ◽  
Satoshi Okutani ◽  
Tadashi Akahane
Keyword(s):  
Surface Layer ◽  
High Density ◽  
Density Plasma

Characterization of the CH4/H2/Ar High Density Plasma Etch Process for HgCdTe

1996 ◽  
Vol 450 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
R. T. Holm ◽  
O. J. Glembocki ◽  
...  
Keyword(s):  
Surface Temperature ◽  
Plasma Etching ◽  
High Density ◽  
Scanning Electron Micrographs ◽  
Plasma Etch ◽  
Ion Energy ◽  
Residual Damage ◽  
Hall Effect Measurements ◽  
Density Plasma

ABSTRACTHigh density plasma etching of Hg1−xCdxTe in CH4/H2/Ar chemistry is examined using mass spectroscopy with careful surface temperature monitoring. The dominant etch products are monitored as a function of surface temperature (15–200°C), ion energy (20–200 eV), total pressure (0.5–5 mTorr), microwave power (200–400 W), and flow fraction of methane in the etch gas mixture (0–30%). In addition, observations are made regarding the regions of parameter space which are best suited to anisotropie, low damage etch processing. These observations are compared with previous results in the form of scanning electron micrographs of etched features for anisotropy evaluation and Hall effect measurements for residual damage. Insights to the overall etch mechanism are given.

RF Plasma CVD Using Hollow Cathode Discharge

1988 ◽  
Vol 129 ◽  
Author(s):  
Shin Araki ◽  
Hideki Kamaji ◽  
Kazuo Norimoto
Keyword(s):  
Hollow Cathode ◽  
Low Pressure ◽  
High Density ◽  
Hollow Cathode Discharge ◽  
Rf Plasma ◽  
High Deposition Rate ◽  
Plasma Cvd ◽  
Plasma Damage ◽  
Discharge Electrode ◽  
Density Plasma

ABSTRACTWe have made a-Si photoreceptors at low pressure to prevent the formation of SimHn powders and by separating the growing surface from the high density plasma. A new plasma CVD method using a hollow-cathode discharge, where the discharge electrode is the cathode, is described. There is a hollow region in the discharge electrode. Hollow-cathode discharge enables a high density plasma to form at low pressure. The gas is decomposed in the hollow cathode preventing plasma damage to the film. This method allows us to achieve a high deposition rate (10 µm/h) and good quality films for photoreceptors.

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