Analysis of the Interface Trap Density in SOI FinFETs with Different TiN Gate Electrode Thickness through Charge Pumping Technique

Michele Rodrigues; Moon Cho; João A. Martino; Nadine Collaert; Abdelkarim Mercha; Eddy Simoen; Cor Claeys

doi:10.1149/1.3183764

Analysis of the Interface Trap Density in SOI FinFETs with Different TiN Gate Electrode Thickness through Charge Pumping Technique

ECS Transactions ◽

10.1149/1.3183764 ◽

2019 ◽

Vol 23 (1) ◽

pp. 559-565 ◽

Cited By ~ 1

Author(s):

Michele Rodrigues ◽

Moon Cho ◽

João A. Martino ◽

Nadine Collaert ◽

Abdelkarim Mercha ◽

...

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Gate Electrode ◽

Electrode Thickness ◽

Charge Pumping

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Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFETs studied by three-level charge pumping

IEEE Electron Device Letters ◽

10.1109/55.491841 ◽

1996 ◽

Vol 17 (5) ◽

pp. 239-241 ◽

Cited By ~ 4

Author(s):

Xiao-Jie Yuan ◽

M. Kivi ◽

S. Taylor ◽

P. Hurley

Keyword(s):

Cross Sections ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping

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Comparison of interface trap density measured by capacitance/subthreshold/charge-pumping methods for n-MOSFETs with Si-implanted gate-SiO/sub 2/

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928639 ◽

2002 ◽

Cited By ~ 1

Author(s):

T. Matsuda ◽

R. Takezawa ◽

K. Arakawa ◽

M. Yasuda ◽

T. Ohzone ◽

...

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping

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Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2012.2222443 ◽

2012 ◽

Vol 59 (6) ◽

pp. 3062-3068 ◽

Cited By ~ 7

Author(s):

E. X. Zhang ◽

D. M. Fleetwood ◽

G. X. Duan ◽

C. X. Zhang ◽

S. A. Francis ◽

...

Keyword(s):

Trap Density ◽

Floating Body ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping ◽

Radiation Induced

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Extraction of Interface Trap Density Through Synchronized Optical Charge Pumping in Gate-All-Around MOSFETs

IEEE Electron Device Letters ◽

10.1109/led.2020.3022025 ◽

2020 ◽

Vol 41 (11) ◽

pp. 1629-1632

Author(s):

Geon-Beom Lee ◽

Yang-Kyu Choi

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping ◽

Optical Charge

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Fabrication of HfO[sub 2] Thin-Film Capacitors with a Polycrystalline Si Gate Electrode and a Low Interface Trap Density

Electrochemical and Solid-State Letters ◽

10.1149/1.1993387 ◽

2005 ◽

Vol 8 (9) ◽

pp. F32 ◽

Cited By ~ 2

Author(s):

Suk Woo Lee ◽

Sug Hun Hong ◽

Jaehoo Park ◽

Moonju Cho ◽

Tae Joo Park ◽

...

Keyword(s):

Thin Film ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Gate Electrode ◽

Thin Film Capacitors

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Standard Test Method for:Determining the Mean Interface Trap Density of MOSFETs by Charge-Pumping (Discontinued 1997)

10.1520/f1340 ◽

1997 ◽

Author(s):

Keyword(s):

Standard Test ◽

Test Method ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping ◽

Standard Test Method ◽

The Mean

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The determination of Si-SiO/sub 2/ interface trap density in irradiated four-terminal VDMOSFETs using charge pumping

IEEE Transactions on Nuclear Science ◽

10.1109/23.556836 ◽

1996 ◽

Vol 43 (6) ◽

pp. 2558-2564 ◽

Cited By ~ 67

Author(s):

S.C. Witczak ◽

K.F. Galloway ◽

R.D. Schrimpf ◽

J.L. Titus ◽

J.R. Brews ◽

...

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping

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Evaluation of Interface Trap Density in a SiGe/Si Heterostructure Using a Charge Pumping Technique and Correlation Between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs

32nd European Solid-State Device Research Conference ◽

10.1109/essderc.2002.194914 ◽

2002 ◽

Cited By ~ 2

Author(s):

T. Tsuchiya ◽

Y. Imada ◽

J. Murota

Keyword(s):

Low Frequency ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Frequency Noise ◽

Low Frequency Noise ◽

Charge Pumping ◽

A Charge

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Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS

2021 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps46558.2021.9405229 ◽

2021 ◽

Author(s):

Jifa Hao ◽

Yuhang Sun ◽

Amartya Ghosh

Keyword(s):

Drain Current ◽

Gate Oxide ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Oxide Interface ◽

Charge Pumping

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Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

Applied Physics Express ◽

10.35848/1882-0786/abc516 ◽

2020 ◽

Vol 13 (11) ◽

pp. 111006

Author(s):

Li-Chuan Sun ◽

Chih-Yang Lin ◽

Po-Hsun Chen ◽

Tsung-Ming Tsai ◽

Kuan-Ju Zhou ◽

...

Keyword(s):

Low Temperature ◽

Trap Density ◽

Flat Band ◽

Interface Trap Density ◽

Interface Trap ◽

Flat Band Voltage ◽

Voltage Shift

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