Fabrication of HfO[sub 2] Thin-Film Capacitors with a Polycrystalline Si Gate Electrode and a Low Interface Trap Density

2005 ◽  
Vol 8 (9) ◽  
pp. F32 ◽  
Author(s):  
Suk Woo Lee ◽  
Sug Hun Hong ◽  
Jaehoo Park ◽  
Moonju Cho ◽  
Tae Joo Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Gate Electrode ◽  
Thin Film Capacitors

Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

2015 ◽  
Vol 36 (2) ◽  
pp. 024007 ◽  
Author(s):  
Yongye Liang ◽  
Jang Kyungsoo ◽  
S. Velumani ◽  
Phu Thi Nguyen Cam ◽  
Yi Junsin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Electrical Performance ◽  
Interface Trap Density ◽  
Interface Trap

Atomic Coordination Analysis of Nitrogen Introduced in SiO2/ SiC Interface and SiO2 Layer by XAFS Measurement

2019 ◽  
Vol 963 ◽  
pp. 222-225
Author(s):  
Masahiro Kunisu ◽  
Shingo Ogawa ◽  
Junichiro Sameshima ◽  
Masanobu Yoshikawa
Keyword(s):  
Thin Film ◽  
Nitrogen Atom ◽  
Multiple Scattering ◽  
Trap Density ◽  
The Other ◽  
No Oxidation ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Coordination Environment ◽  
Atomic Coordination

Although the nitridation by N2O or NO oxidation with annealing has been used in order to reduce interface trap density, the atomic location or coordination environment of nitrogen atom have been still unclear. In this study, we have investigated atomic coordination environment of nitrogen atom in both SiO2/SiC interface and SiO2 layer after nitridation by N2O annealing using XAFS measurements and ab initio multiple scattering calculations. Nitrogen in SiO2 layer was suggested to have the same atomic coordination environments as general SiON thin film. On the other hand, in SiO2/SiC region, nitrogen atoms were isolated and occupied the C-site of SiC structure, and it was confirmed that nitrogen atoms were surrounded by silicon atoms and strong Si-N bonds were formed in the interface region that was not eliminated by HF etching.

The Electrical Characteristics of a Pd/AlN/Si Thin Film Hydrogen Gas Sensor

2003 ◽  
Vol 801 ◽  
Author(s):  
Erik F. McCullen ◽  
Haripriya E. Prakasam ◽  
Wenjun Mo ◽  
Jagdish Thakur ◽  
Ratna Naik ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface States ◽  
Hydrogen Gas ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Interface Traps ◽  
Electrical Characteristics ◽  
Film Sensor ◽  
Si Thin Film

ABSTRACTWe have extended our previous investigation of the electrical characteristics of a Pd/AlN/Si thin film sensor for varying thicknesses of AlN, from 300–2000Å. The capacitance vs. voltage, C(V), and conductance vs. voltage, G(V), measurements were utilized to investigate the presence of surface states within the Si gap at the AlN/Si interface. Our previous experiments on 500Å AlN did show the presence of interface traps, with an estimated surface density between 8×1014 and 1.5×1015 m−2eV−1 [1]. In our present work we've examined the effect of AlN thickness on the density of these interface traps. The density is dependent on AlN thickness. The thinner devices, 300Å, showed an interface trap density of 20–30×1015 m−2eV−1. The interface trap density decreased with increasing thickness up to 500Å, where the density remained relatively constant at about 1–5×1015 m−2eV−1 for thicknesses up to 2000Å. We have also shown that the interface trap density is independent of annealing.

scholarly journals ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

RSC Advances ◽  
2020 ◽  
Vol 10 (17) ◽  
pp. 9902-9906 ◽  
Author(s):  
Kuan-Yu Chen ◽  
Chih-Chiang Yang ◽  
Chun-Yuan Huang ◽  
Yan-Kuin Su
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Oxide Thin Film ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Indium Gallium ◽  
Al2o3 Gate Dielectric

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.

Analysis of the Interface Trap Density in SOI FinFETs with Different TiN Gate Electrode Thickness through Charge Pumping Technique

2019 ◽  
Vol 23 (1) ◽  
pp. 559-565 ◽  
Author(s):  
Michele Rodrigues ◽  
Moon Cho ◽  
João A. Martino ◽  
Nadine Collaert ◽  
Abdelkarim Mercha ◽  
...  
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Gate Electrode ◽  
Electrode Thickness ◽  
Charge Pumping

Effect of rapid thermal annealing on the interface trap density between Pt and (Ba,Sr)TiO3 thin film

1997 ◽  
Vol 17 (1-4) ◽  
pp. 179-186 ◽  
Author(s):  
Dong-Hwa Kwak ◽  
Byung-Tak Jang ◽  
Seon Yong Cha ◽  
Joon Sung Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Tio3 Thin Film

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs

2007 ◽  
Vol 28 (3) ◽  
pp. 232-234 ◽  
Author(s):  
G. Kapila ◽  
B. Kaczer ◽  
A. Nackaerts ◽  
N. Collaert ◽  
G. V. Groeseneken
Keyword(s):  
Direct Measurement ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap
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